30µA @ 250V, Reverse Leakage Current @ Vr
6 parts found
Part Numbers Manufacturer Name Datasheet Diode Type Reverse DC Voltage(Vr) Current - Average Rectified (Io) Forward Voltage (Vf) Speed Reverse Recovery Time (trr) Reverse Leakage Current @ Vr Capacitance @ Vr, F Thermal Resistance Operating Temperature - Junction Mounting Type Package / Case
MBR40250TG ON SEMICONDUCTOR
Schottky 250V 40A 970mV @ 40A Fast Recovery =< 500ns, > 200mA (Io) 35ns 30µA @ 250V 500pF @ 5V, 1MHz 2°C/W Jc -65°C ~ 150°C Through Hole TO-220-3
MBR40250G ON SEMICONDUCTOR
Schottky 250V 40A 970mV @ 40A Fast Recovery =< 500ns, > 200mA (Io) 35ns 30µA @ 250V 500pF @ 5V, 1MHz 3°C/W Jc -65°C ~ 150°C Through Hole TO-220-2
MBRF40250TG ON SEMICONDUCTOR
Schottky 250V 40A 970mV @ 40A Fast Recovery =< 500ns, > 200mA (Io) 35ns 30µA @ 250V 500pF @ 5V, 1MHz 3°C/W Jc -65°C ~ 150°C Through Hole TO-220-3 Full Pack
MBR40250 ON SEMICONDUCTOR
Schottky 250V 40A 970mV @ 40A Fast Recovery =< 500ns, > 200mA (Io) 35ns 30µA @ 250V 500pF @ 5V, 1MHz 3°C/W Jc -65°C ~ 150°C Through Hole TO-220-2
MBR40250T ON SEMICONDUCTOR
Schottky 250V 40A 970mV @ 40A Fast Recovery =< 500ns, > 200mA (Io) 35ns 30µA @ 250V 500pF @ 5V, 1MHz 2°C/W Jc -65°C ~ 150°C Through Hole TO-220-3
MBRF40250T ON SEMICONDUCTOR
Schottky 250V 40A 970mV @ 40A Fast Recovery =< 500ns, > 200mA (Io) 35ns 30µA @ 250V 500pF @ 5V, 1MHz 3°C/W Jc -65°C ~ 150°C Through Hole TO-220-3 Full Pack