| Part Numbers | Manufacturer Name | Datasheet | Diode Type | Reverse DC Voltage(Vr) | Current - Average Rectified (Io) | Forward Voltage (Vf) | Speed | Reverse Recovery Time (trr) | Reverse Leakage Current @ Vr | Capacitance @ Vr, F | Thermal Resistance | Operating Temperature - Junction | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| RHRG30120 | FAIRCHILD SEMICONDUCTOR CORP | Standard | 1200V (1.2kV) | 30A | 3.2V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 85ns | 250µA @ 1200V | - | 1.2°C/W Jc | -65°C ~ 175°C | Through Hole, Radial | TO-247-2 | |
| RHRP30120 | FAIRCHILD SEMICONDUCTOR CORP | Standard | 1200V (1.2kV) | 30A | 3.2V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 85ns | 250µA @ 1200V | - | 1.2°C/W Jc | -65°C ~ 175°C | Through Hole | TO-220-2 | |
| RHRG75120 | FAIRCHILD SEMICONDUCTOR CORP | Standard | 1200V (1.2kV) | 75A | 3.2V @ 75A | Fast Recovery =< 500ns, > 200mA (Io) | 100ns | 250µA @ 1200V | - | 0.8°C/W Jc | -65°C ~ 175°C | Through Hole, Radial | TO-247-2 | |
| DSEP30-12AR | IXYS CORP | Standard | 1200V (1.2kV) | 30A | 2.74V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 40ns | 250µA @ 1200V | - | 0.25°C/W Cs | -55°C ~ 175°C | Through Hole | - | |
| DSEP30-12CR | IXYS CORP | Standard | 1200V (1.2kV) | 30A | 4.98V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 15ns | 250µA @ 1200V | - | 0.25°C/W Cs | -55°C ~ 175°C | Through Hole | - | |
| C4D08120E | CREE INC | Silicon Carbide Schottky | 1200V (1.2kV) | 12.1A | 3V @ 2A | No Recovery Time > 500mA (Io) | 0ns | 250µA @ 1200V | 560pF @ 0V, 1MHz | 1.1°C/W Jc | -55°C ~ 175°C | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
| C4D08120A | CREE INC | Silicon Carbide Schottky | 1200V (1.2kV) | 11.3A | 1.8V @ 7.5A | No Recovery Time > 500mA (Io) | 0ns | 250µA @ 1200V | 560pF @ 0V, 1MHz | 1.26°C/W Jc | -55°C ~ 175°C | Through Hole | TO-220-2 | |
| C4D10120A | CREE INC | Silicon Carbide Schottky | 1200V (1.2kV) | 14A | 1.8V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 250µA @ 1200V | 754pF @ 0V, 1MHz | 1.1°C/W Jc | -55°C ~ 175°C | Through Hole | TO-220-2 | |
| C4D10120E | CREE INC | Silicon Carbide Schottky | 1200V (1.2kV) | 14A | 1.8V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 250µA @ 1200V | 754pF @ 0V, 1MHz | 0.88°C/W Jc | -55°C ~ 175°C | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
| RURG30120 | FAIRCHILD SEMICONDUCTOR CORP | Standard | 1200V (1.2kV) | 30A | 2.1V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 250µA @ 1200V | - | 1.2°C/W Jc | -65°C ~ 175°C | Through Hole, Radial | TO-247-2 |
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