200µA @ 650V, Reverse Leakage Current @ Vr
2 parts found
Part Numbers Manufacturer Name Datasheet Diode Type Reverse DC Voltage(Vr) Current - Average Rectified (Io) Forward Voltage (Vf) Speed Reverse Recovery Time (trr) Reverse Leakage Current @ Vr Capacitance @ Vr, F Thermal Resistance Operating Temperature - Junction Mounting Type Package / Case
APT10SCD65K MICROSEMI POWER PRODUCTS GROUP
Silicon Carbide Schottky 650V 17A 1.8V @ 10A No Recovery Time > 500mA (Io) 0ns 200µA @ 650V 300pF @ 1V, 1MHz - - Through Hole TO-220-2
APT10SCD65KCT MICROSEMI POWER PRODUCTS GROUP
Silicon Carbide Schottky 650V 17A 1.8V @ 10A No Recovery Time > 500mA (Io) 0ns 200µA @ 650V 300pF @ 1V, 1MHz - - Through Hole TO-220-2