| Part Numbers | Manufacturer Name | Datasheet | Diode Type | Reverse DC Voltage(Vr) | Current - Average Rectified (Io) | Forward Voltage (Vf) | Speed | Reverse Recovery Time (trr) | Reverse Leakage Current @ Vr | Capacitance @ Vr, F | Thermal Resistance | Operating Temperature - Junction | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| CSD10030A | CREE INC | Silicon Carbide Schottky | 300V | 10A | 1.4V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 300V | 660pF @ 0V, 1MHz | 1.9°C/W Jc | -55°C ~ 175°C | Through Hole | TO-220-2 | |
| SDT10S30 | INFINEON TECHNOLOGIES AG | Silicon Carbide Schottky | 300V | 10A (DC) | 1.7V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 300V | 600pF @ 0V, 1MHz | 2.3°C/W Jc | -55°C ~ 175°C | Through Hole | TO-220-2 | |
| SDP10S30 | INFINEON TECHNOLOGIES AG | Silicon Carbide Schottky | 300V | 10A (DC) | 1.7V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 300V | 600pF @ 0V, 1MHz | 2.3°C/W Jc | -55°C ~ 175°C | Through Hole | TO-220-3 | |
| SIDC24D30SIC3 | INFINEON TECHNOLOGIES AG | Silicon Carbide Schottky | 300V | 10A (DC) | 1.7V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 300V | 600pF @ 1V, 1MHz | - | -55°C ~ 175°C | Surface Mount | Wafer |
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