| Part Numbers | Manufacturer Name | Datasheet | Diode Type | Reverse DC Voltage(Vr) | Current - Average Rectified (Io) | Forward Voltage (Vf) | Speed | Reverse Recovery Time (trr) | Reverse Leakage Current @ Vr | Capacitance @ Vr, F | Thermal Resistance | Operating Temperature - Junction | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| DH60-14A | IXYS CORP | Standard | 1400V (1.4kV) | 60A | 2.04V @ 60A | Fast Recovery =< 500ns, > 200mA (Io) | 230ns | 200µA @ 1200V | 32pF @ 1200V, 1MHz | 0.3°C/W Jc | -55°C ~ 150°C | Through Hole | TO-247-2 | |
| SCS210KGC | ROHM CO LTD | Silicon Carbide Schottky | 1200V (1.2kV) | 10A (DC) | 1.6V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 1200V | 550pF @ 1V, 1MHz | 0.99°C/W Jc | 175°C (Max) | Through Hole | TO-220-2 | |
| C2D05120E | CREE INC | Silicon Carbide Schottky | 1200V (1.2kV) | 10A | 1.8V @ 5A | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 1200V | 455pF @ 0V, 1MHz | - | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
| C2D05120A | CREE INC | Silicon Carbide Schottky | 1200V (1.2kV) | 10A | 1.8V @ 5A | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 1200V | 455pF @ 0V, 1MHz | 1°C/W Jc | -55°C ~ 175°C | Through Hole | TO-220-2 | |
| C2D10120A | CREE INC | Silicon Carbide Schottky | 1200V (1.2kV) | 17A | 1.8V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 1200V | 1000pF @ 0V, 1MHz | 0.48°C/W Jc | -55°C ~ 175°C | Through Hole | TO-220-2 | |
| C4D15120A | CREE INC | Silicon Carbide Schottky | 1200V (1.2kV) | 20A | 1.8V @ 15A | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 1200V | 1200pF @ 0V, 1MHz | 0.78°C/W Jc | -55°C ~ 175°C | Through Hole | TO-220-2 | |
| C4D20120A | CREE INC | Silicon Carbide Schottky | 1200V (1.2kV) | 20A | 1.8V @ 20A | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 1200V | 1500pF @ 0V, 1MHz | 0.62°C/W Jc | -55°C ~ 175°C | Through Hole | TO-220 (2 Leads + Tab) | |
| APT10SCD120B | MICROSEMI POWER PRODUCTS GROUP | Silicon Carbide Schottky | 1200V (1.2kV) | 36A (DC) | 1.8V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 1200V | 600pF @ 0V, 1MHz | 1°C/W Jc | -55°C ~ 150°C | Through Hole | TO-247-3 | |
| SCS110KGC | ROHM CO LTD | Silicon Carbide Schottky | 1200V (1.2kV) | 10A (DC) | 1.75V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 1200V | 650pF @ 1V, 1MHz | 1.4°C/W Jc | 175°C (Max) | Through Hole | TO-220-2 |
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