| Part Numbers | Manufacturer Name | Datasheet | Diode Type | Reverse DC Voltage(Vr) | Current - Average Rectified (Io) | Forward Voltage (Vf) | Speed | Reverse Recovery Time (trr) | Reverse Leakage Current @ Vr | Capacitance @ Vr, F | Thermal Resistance | Operating Temperature - Junction | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| STPSC1206D | STMICROELECTRONICS | Silicon Carbide Schottky | 600V | 12A | 1.7V @ 12A | No Recovery Time > 500mA (Io) | 0ns | 150µA @ 600V | 750pF @ 0V, 1MHz | 1.75°C/W Jc | -40°C ~ 175°C | Through Hole | TO-220-2 | |
| APT15D60BG | MICROSEMI POWER PRODUCTS GROUP | Standard | 600V | 15A | 1.8V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 80ns | 150µA @ 600V | - | 1.35°C/W Jc | -55°C ~ 175°C | Through Hole, Radial | TO-247-3 | |
| BYC8-600,127 | NXP SEMICONDUCTORS | Standard | 600V | 8A | 2.9V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 52ns | 150µA @ 600V | - | 2.2°C/W Jl | 150°C (Max) | Through Hole | TO-220-2 | |
| BYC8X-600,127 | NXP SEMICONDUCTORS | Standard | 600V | 8A | 2.9V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 52ns | 150µA @ 600V | - | 4.8°C/W Jh | 150°C (Max) | Through Hole | TO-220-2 Full Pack, Isolated Tab | |
| BYC58X-600,127 | NXP SEMICONDUCTORS | Standard | 600V | 8A | 3.2V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 12.5ns | 150µA @ 600V | - | 3°C/W Jh | 150°C (Max) | Through Hole | TO-220-2 Full Pack, Isolated Tab | |
| BYC8B-600,118 | NXP SEMICONDUCTORS | Standard | 500V | 8A | 2.9V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 52ns | 150µA @ 600V | - | 2.2°C/W Jl | 150°C (Max) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | |
| STPSC1006G-TR | STMICROELECTRONICS | Silicon Carbide Schottky | 600V | 10A | 1.7V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 150µA @ 600V | 650pF @ 0V 1MHz | 2°C/W Jc | -40°C ~ 175°C | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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