S1A |
FAIRCHILD SEMICONDUCTOR CORP |
|
Standard
|
50V
|
1A
|
1.1V @ 1A
|
Standard Recovery >500ns, > 200mA (Io)
|
1.8µs
|
1µA @ 50V
|
12pF @ 4V, 1MHz
|
85°C/W Ja
|
-55°C ~ 150°C
|
Surface Mount
|
DO-214AC, SMA
|
1N5802 |
MICROSEMI COMMERCIAL BUSINESS UNIT |
|
Standard
|
50V
|
1A
|
875mV @ 1A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
25ns
|
1µA @ 50V
|
25pF @ 10V, 1MHz
|
36°C/W Jl
|
-65°C ~ 175°C
|
Through Hole
|
A, Axial
|
1N5802US |
MICROSEMI COMMERCIAL BUSINESS UNIT |
|
Standard
|
50V
|
1A
|
875mV @ 1A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
25ns
|
1µA @ 50V
|
25pF @ 10V, 1MHz
|
13°C/W Jl
|
-65°C ~ 175°C
|
-
|
-
|
JANTX1N5802 |
MICROSEMI CORP |
|
Standard
|
50V
|
1A
|
875mV @ 1A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
25ns
|
1µA @ 50V
|
25pF @ 10V, 1MHz
|
36°C/W Jl
|
-65°C ~ 175°C
|
Through Hole
|
A, Axial
|
JANTXV1N5802 |
MICROSEMI CORP |
|
Standard
|
50V
|
1A
|
875mV @ 1A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
25ns
|
1µA @ 50V
|
25pF @ 10V, 1MHz
|
36°C/W Jl
|
-65°C ~ 175°C
|
Through Hole
|
A, Axial
|
JANTX1N5802US |
MICROSEMI CORP |
|
Standard
|
50V
|
1A
|
875mV @ 1A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
25ns
|
1µA @ 50V
|
25pF @ 10V, 1MHz
|
13°C/W Jl
|
-65°C ~ 175°C
|
-
|
-
|
JANTXV1N5802US |
MICROSEMI CORP |
|
Standard
|
50V
|
1A
|
875mV @ 1A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
25ns
|
1µA @ 50V
|
25pF @ 10V, 1MHz
|
13°C/W Jl
|
-65°C ~ 175°C
|
-
|
-
|
S1A-E3/5AT |
VISHAY SEMICONDUCTORS |
|
Standard
|
50V
|
1A
|
1.1V @ 1A
|
Standard Recovery >500ns, > 200mA (Io)
|
1.8µs
|
1µA @ 50V
|
12pF @ 4V, 1MHz
|
27°C/W Jl
|
-55°C ~ 150°C
|
Surface Mount
|
DO-214AC, SMA
|
M100A-E3/54 |
VISHAY SEMICONDUCTORS |
|
Standard
|
50V
|
1A
|
1V @ 1A
|
Standard Recovery >500ns, > 200mA (Io)
|
2µs
|
1µA @ 50V
|
-
|
-
|
-50°C ~ 150°C
|
Through Hole
|
DO-204AL, DO-41, Axial
|
S1PAHE3/85A |
VISHAY SEMICONDUCTORS |
|
Standard
|
50V
|
1A
|
1.1V @ 1A
|
Standard Recovery >500ns, > 200mA (Io)
|
1.8µs
|
1µA @ 50V
|
-
|
-
|
-
|
Surface Mount
|
DO-220AA
|