1µA @ 1600V, Reverse Leakage Current @ Vr
6 parts found
Part Numbers Manufacturer Name Datasheet Diode Type Reverse DC Voltage(Vr) Current - Average Rectified (Io) Forward Voltage (Vf) Speed Reverse Recovery Time (trr) Reverse Leakage Current @ Vr Capacitance @ Vr, F Thermal Resistance Operating Temperature - Junction Mounting Type Package / Case
BYG10Y-E3/TR VISHAY SEMICONDUCTORS
Avalanche 1600V (1.6kV) 1.5A 1.15V @ 1.5A Standard Recovery >500ns, > 200mA (Io) 4µs 1µA @ 1600V - 25°C/W Jl -55°C ~ 150°C Surface Mount DO-214AC, SMA
BYX10GP-E3/54 VISHAY SEMICONDUCTORS
Standard 1600V (1.6kV) 360mA 1.6V @ 2A Standard Recovery >500ns, > 200mA (Io) 2µs 1µA @ 1600V - 45°C/W Ja -65°C ~ 175°C Through Hole DO-204AL, DO-41, Axial
BYX10GP-E3/73 VISHAY SEMICONDUCTORS
Standard 1600V (1.6kV) 360mA 1.6V @ 2A Standard Recovery >500ns, > 200mA (Io) 2µs 1µA @ 1600V - 45°C/W Ja -65°C ~ 175°C Through Hole DO-204AL, DO-41, Axial
BYX10GPHE3/54 VISHAY SEMICONDUCTORS
Standard 1600V (1.6kV) 360mA 1.6V @ 2A Standard Recovery >500ns, > 200mA (Io) 2µs 1µA @ 1600V - 45°C/W Ja -65°C ~ 175°C Through Hole DO-204AL, DO-41, Axial
BYX10GPHE3/73 VISHAY SEMICONDUCTORS
Standard 1600V (1.6kV) 360mA 1.6V @ 2A Standard Recovery >500ns, > 200mA (Io) 2µs 1µA @ 1600V - 45°C/W Ja -65°C ~ 175°C Through Hole DO-204AL, DO-41, Axial
BYG10Y-E3/TR3 VISHAY SEMICONDUCTORS
Avalanche 1600V (1.6kV) 1.5A 1.15V @ 1.5A Standard Recovery >500ns, > 200mA (Io) 4µs 1µA @ 1600V - 25°C/W Jl -55°C ~ 150°C Surface Mount DO-214AC, SMA