200ns,Reverse Recovery Time (trr)
6.6pF @ 4V, 1MHz,Capacitance @ Vr, F
6 parts found
Part Numbers Manufacturer Name Datasheet Diode Type Reverse DC Voltage(Vr) Current - Average Rectified (Io) Forward Voltage (Vf) Speed Reverse Recovery Time (trr) Reverse Leakage Current @ Vr Capacitance @ Vr, F Thermal Resistance Operating Temperature - Junction Mounting Type Package / Case
RMPG06J-E3/54 VISHAY SEMICONDUCTORS
Standard 600V 1A 1.3V @ 1A Fast Recovery =< 500ns, > 200mA (Io) 200ns 5µA @ 600V 6.6pF @ 4V, 1MHz 67°C/W Ja -55°C ~ 150°C Through Hole MPG06, Axial
RMPG06J-E3/73 VISHAY SEMICONDUCTORS
Standard 600V 1A 1.3V @ 1A Fast Recovery =< 500ns, > 200mA (Io) 200ns 5µA @ 600V 6.6pF @ 4V, 1MHz 67°C/W Ja -55°C ~ 150°C Through Hole MPG06, Axial
RMPG06JHE3_A/54 VISHAY SEMICONDUCTORS
Standard 600V 1A 1.3V @ 1A Standard Recovery >500ns, > 200mA (Io) 200ns 5µA @ 600V 6.6pF @ 4V, 1MHz 67°C/W Ja -55°C ~ 150°C - -
RMPG06JHE3_A/73 VISHAY SEMICONDUCTORS
Standard 600V 1A 1.3V @ 1A Standard Recovery >500ns, > 200mA (Io) 200ns 5µA @ 600V 6.6pF @ 4V, 1MHz 67°C/W Ja -55°C ~ 150°C - -
RMPG06JHE3/73 VISHAY SEMICONDUCTORS
Standard 600V 1A 1.3V @ 1A Fast Recovery =< 500ns, > 200mA (Io) 200ns 5µA @ 600V 6.6pF @ 4V, 1MHz 67°C/W Ja -55°C ~ 150°C Through Hole MPG06, Axial
RMPG06JHE3/54 VISHAY SEMICONDUCTORS
Standard 600V 1A 1.3V @ 1A Fast Recovery =< 500ns, > 200mA (Io) 200ns 5µA @ 600V 6.6pF @ 4V, 1MHz 67°C/W Ja -55°C ~ 150°C Through Hole MPG06, Axial