GI850-E3/54 |
VISHAY SEMICONDUCTORS |
|
Standard
|
50V
|
3A
|
1.25V @ 3A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
200ns
|
10µA @ 50V
|
28pF @ 4V, 1MHz
|
22°C/W Ja
|
-50°C ~ 150°C
|
Through Hole
|
DO-201AD, Axial
|
GI858-E3/54 |
VISHAY SEMICONDUCTORS |
|
Standard
|
800V
|
3A
|
1.25V @ 3A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
200ns
|
10µA @ 800V
|
28pF @ 4V, 1MHz
|
22°C/W Ja
|
-50°C ~ 150°C
|
Through Hole
|
DO-201AD, Axial
|
GI856-E3/54 |
VISHAY SEMICONDUCTORS |
|
Standard
|
600V
|
3A
|
1.25V @ 3A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
200ns
|
10µA @ 600V
|
28pF @ 4V, 1MHz
|
22°C/W Ja
|
-50°C ~ 150°C
|
Through Hole
|
DO-201AD, Axial
|
GI851-E3/54 |
VISHAY SEMICONDUCTORS |
|
Standard
|
100V
|
3A
|
1.25V @ 3A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
200ns
|
10µA @ 100V
|
28pF @ 4V, 1MHz
|
22°C/W Ja
|
-50°C ~ 150°C
|
Through Hole
|
DO-201AD, Axial
|
GI852-E3/54 |
VISHAY SEMICONDUCTORS |
|
Standard
|
200V
|
3A
|
1.25V @ 3A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
200ns
|
10µA @ 200V
|
28pF @ 4V, 1MHz
|
22°C/W Ja
|
-50°C ~ 150°C
|
Through Hole
|
DO-201AD, Axial
|
GI854-E3/54 |
VISHAY SEMICONDUCTORS |
|
Standard
|
400V
|
3A
|
1.25V @ 3A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
200ns
|
10µA @ 400V
|
28pF @ 4V, 1MHz
|
22°C/W Ja
|
-50°C ~ 150°C
|
Through Hole
|
DO-201AD, Axial
|
GI856-E3/73 |
VISHAY SEMICONDUCTORS |
|
Standard
|
600V
|
3A
|
1.25V @ 3A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
200ns
|
10µA @ 600V
|
28pF @ 4V, 1MHz
|
22°C/W Ja
|
-50°C ~ 150°C
|
Through Hole
|
DO-201AD, Axial
|
GI858-E3/73 |
VISHAY SEMICONDUCTORS |
|
Standard
|
800V
|
3A
|
1.25V @ 3A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
200ns
|
10µA @ 800V
|
28pF @ 4V, 1MHz
|
22°C/W Ja
|
-50°C ~ 150°C
|
Through Hole
|
DO-201AD, Axial
|