BY500-200-E3/54 |
VISHAY SEMICONDUCTORS |
|
Standard
|
200V
|
5A
|
1.35V @ 5A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
200ns
|
10µA @ 200V
|
28pF @ 4V, 1MHz
|
22°C/W Ja
|
125°C (Max)
|
Through Hole
|
DO-201AD, Axial
|
BY500-600-E3/54 |
VISHAY SEMICONDUCTORS |
|
Standard
|
600V
|
5A
|
1.35V @ 5A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
200ns
|
10µA @ 600V
|
28pF @ 4V, 1MHz
|
22°C/W Ja
|
125°C (Max)
|
Through Hole
|
DO-201AD, Axial
|
BY500-400-E3/54 |
VISHAY SEMICONDUCTORS |
|
Standard
|
400V
|
5A
|
1.35V @ 5A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
200ns
|
10µA @ 400V
|
28pF @ 4V, 1MHz
|
22°C/W Ja
|
125°C (Max)
|
Through Hole
|
DO-201AD, Axial
|
BY500-800-E3/54 |
VISHAY SEMICONDUCTORS |
|
Standard
|
800V
|
5A
|
1.35V @ 5A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
200ns
|
10µA @ 800V
|
28pF @ 4V, 1MHz
|
22°C/W Ja
|
125°C (Max)
|
Through Hole
|
DO-201AD, Axial
|
BY500-100-E3/54 |
VISHAY SEMICONDUCTORS |
|
Standard
|
100V
|
5A
|
1.35V @ 5A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
200ns
|
10µA @ 100V
|
28pF @ 4V, 1MHz
|
22°C/W Ja
|
125°C (Max)
|
Through Hole
|
DO-201AD, Axial
|
BY500-100-E3/73 |
VISHAY SEMICONDUCTORS |
|
Standard
|
100V
|
5A
|
1.35V @ 5A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
200ns
|
10µA @ 100V
|
28pF @ 4V, 1MHz
|
22°C/W Ja
|
125°C (Max)
|
Through Hole
|
DO-201AD, Axial
|
BY500-400-E3/73 |
VISHAY SEMICONDUCTORS |
|
Standard
|
400V
|
5A
|
1.35V @ 5A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
200ns
|
10µA @ 400V
|
28pF @ 4V, 1MHz
|
22°C/W Ja
|
125°C (Max)
|
Through Hole
|
DO-201AD, Axial
|
BY500-600-E3/73 |
VISHAY SEMICONDUCTORS |
|
Standard
|
600V
|
5A
|
1.35V @ 5A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
200ns
|
10µA @ 600V
|
28pF @ 4V, 1MHz
|
22°C/W Ja
|
125°C (Max)
|
Through Hole
|
DO-201AD, Axial
|
BY500-800-E3/73 |
VISHAY SEMICONDUCTORS |
|
Standard
|
800V
|
5A
|
1.35V @ 5A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
200ns
|
10µA @ 800V
|
28pF @ 4V, 1MHz
|
22°C/W Ja
|
125°C (Max)
|
Through Hole
|
DO-201AD, Axial
|
GI820-E3/54 |
VISHAY SEMICONDUCTORS |
|
Standard
|
50V
|
5A
|
1.1V @ 5A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
200ns
|
10µA @ 50V
|
300pF @ 4V, 1MHz
|
10°C/W Ja
|
-50°C ~ 150°C
|
Through Hole
|
P600, Axial
|