200ns,Reverse Recovery Time (trr)
-,Package / Case
3 parts found
Part Numbers Manufacturer Name Datasheet Diode Type Reverse DC Voltage(Vr) Current - Average Rectified (Io) Forward Voltage (Vf) Speed Reverse Recovery Time (trr) Reverse Leakage Current @ Vr Capacitance @ Vr, F Thermal Resistance Operating Temperature - Junction Mounting Type Package / Case
AP01CV1 SANKEN ELECTRIC CO LTD
Standard 1000V (1kV) 200mA 4V @ 200mA Small Signal =< 200mA (Io), Any Speed 200ns 100µA @ 1000V - - - - -
RMPG06JHE3_A/54 VISHAY SEMICONDUCTORS
Standard 600V 1A 1.3V @ 1A Standard Recovery >500ns, > 200mA (Io) 200ns 5µA @ 600V 6.6pF @ 4V, 1MHz 67°C/W Ja -55°C ~ 150°C - -
RMPG06JHE3_A/73 VISHAY SEMICONDUCTORS
Standard 600V 1A 1.3V @ 1A Standard Recovery >500ns, > 200mA (Io) 200ns 5µA @ 600V 6.6pF @ 4V, 1MHz 67°C/W Ja -55°C ~ 150°C - -