19ns,Reverse Recovery Time (trr)
5 parts found
Part Numbers Manufacturer Name Datasheet Diode Type Reverse DC Voltage(Vr) Current - Average Rectified (Io) Forward Voltage (Vf) Speed Reverse Recovery Time (trr) Reverse Leakage Current @ Vr Capacitance @ Vr, F Thermal Resistance Operating Temperature - Junction Mounting Type Package / Case
APT15DQ60KG MICROSEMI POWER PRODUCTS GROUP
Standard 600V 15A 2.4V @ 15A Fast Recovery =< 500ns, > 200mA (Io) 19ns 25µA @ 600V - 1.35°C/W Jc -55°C ~ 175°C Through Hole, Radial TO-220-2
APT15DQ60BG MICROSEMI POWER PRODUCTS GROUP
Standard 600V 15A 2.4V @ 15A Fast Recovery =< 500ns, > 200mA (Io) 19ns 25µA @ 600V - 1.35°C/W Jc -55°C ~ 175°C Through Hole, Radial TO-247-3
BYC10-600PQ NXP SEMICONDUCTORS
Standard 600V 10A 1.8V @ 10A Fast Recovery =< 500ns, > 200mA (Io) 19ns - - - 150°C (Max) Through Hole TO-220-2
VS-6EWX06FNTR-M3 VISHAY SEMICONDUCTORS
Standard 600V 6A 3.1V @ 6A Fast Recovery =< 500ns, > 200mA (Io) 19ns 20µA @ 600V - 3°C/W Jc -65°C ~ 175°C Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63
VS-6EWX06FN-M3 VISHAY SEMICONDUCTORS
Standard 600V 6A 3.1V @ 6A Fast Recovery =< 500ns, > 200mA (Io) 19ns 20µA @ 600V - 3°C/W Jc -65°C ~ 175°C Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63