160ns,Reverse Recovery Time (trr)
38 parts found
Part Numbers Manufacturer Name Datasheet Diode Type Reverse DC Voltage(Vr) Current - Average Rectified (Io) Forward Voltage (Vf) Speed Reverse Recovery Time (trr) Reverse Leakage Current @ Vr Capacitance @ Vr, F Thermal Resistance Operating Temperature - Junction Mounting Type Package / Case
BY329-1500S,127 NXP SEMICONDUCTORS
Standard 1500V (1.5kV) 6A (DC) 1.6V @ 6.5A Fast Recovery =< 500ns, > 200mA (Io) 160ns 250µA @ 1300V - 2°C/W Jl 150°C (Max) Through Hole TO-220-2
BY329X-1500S,127 NXP SEMICONDUCTORS
Standard 1500V (1.5kV) 6A (DC) 1.6V @ 6.5A Fast Recovery =< 500ns, > 200mA (Io) 160ns 250µA @ 1300V - 4.8°C/W Jh 150°C (Max) Through Hole TO-220-2 Full Pack, Isolated Tab
VS-20ETF06FPPBF VISHAY SEMICONDUCTORS
Standard 600V 20A 1.3V @ 20A Fast Recovery =< 500ns, > 200mA (Io) 160ns 100µA @ 600V - 0.5°C/W Cs -40°C ~ 150°C Through Hole TO-220-2 Full Pack
VS-20ETF06PBF VISHAY SEMICONDUCTORS
Standard 600V 20A 1.3V @ 20A Fast Recovery =< 500ns, > 200mA (Io) 160ns 100µA @ 600V - 0.5°C/W Cs -40°C ~ 150°C Through Hole TO-220-2
VS-20ETF02FPPBF VISHAY SEMICONDUCTORS
Standard 200V 20A 1.3V @ 20A Fast Recovery =< 500ns, > 200mA (Io) 160ns 100µA @ 200V - 0.5°C/W Cs -40°C ~ 150°C Through Hole TO-220-2 Full Pack
VS-20ETF04FPPBF VISHAY SEMICONDUCTORS
Standard 400V 20A 1.3V @ 20A Fast Recovery =< 500ns, > 200mA (Io) 160ns 100µA @ 400V - 0.5°C/W Cs -40°C ~ 150°C Through Hole TO-220-3 Full Pack
VS-20ETF10PBF VISHAY SEMICONDUCTORS
Standard 1000V (1kV) 20A 1.3V @ 20A Fast Recovery =< 500ns, > 200mA (Io) 160ns 100µA @ 1000V - 0.5°C/W Cs -40°C ~ 150°C Through Hole TO-220-2 Full Pack
VS-20ETF04PBF VISHAY SEMICONDUCTORS
Standard 400V 20A 1.3V @ 20A Fast Recovery =< 500ns, > 200mA (Io) 160ns 100µA @ 400V - 0.5°C/W Cs -40°C ~ 150°C Through Hole TO-220-2
VS-20ETF02PBF VISHAY SEMICONDUCTORS
Standard 200V 20A 1.3V @ 20A Fast Recovery =< 500ns, > 200mA (Io) 160ns 100µA @ 200V - 0.5°C/W Cs -40°C ~ 150°C Through Hole TO-220-2
VS-30EPF02PBF VISHAY SEMICONDUCTORS
Standard 200V 30A 1.41V @ 30A Fast Recovery =< 500ns, > 200mA (Io) 160ns 100µA @ 200V - 0.2°C/W Cs -40°C ~ 150°C Through Hole TO-247-2