| Part Numbers | Manufacturer Name | Datasheet | Diode Type | Reverse DC Voltage(Vr) | Current - Average Rectified (Io) | Forward Voltage (Vf) | Speed | Reverse Recovery Time (trr) | Reverse Leakage Current @ Vr | Capacitance @ Vr, F | Thermal Resistance | Operating Temperature - Junction | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| MBRD835LG | ON SEMICONDUCTOR | Schottky | 35V | 8A | 510mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1.4mA @ 35V | - | 2.8°C/W Jc | -65°C ~ 150°C | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
| SBRD8835LG | ON SEMICONDUCTOR | Schottky | 35V | 8A | 510mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1.4mA @ 35V | - | 2.8°C/W Jc | -65°C ~ 150°C | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
| MBRD835LT4G | ON SEMICONDUCTOR | Schottky | 35V | 8A | 510mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1.4mA @ 35V | - | 2.8°C/W Jc | -65°C ~ 150°C | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
| SBR835LT4G | ON SEMICONDUCTOR | Schottky | 35V | 8A | 510mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1.4mA @ 35V | - | 2.8°C/W Jc | -65°C ~ 150°C | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
| SBRD8835LT4G | ON SEMICONDUCTOR | Schottky | 35V | 8A | 510mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1.4mA @ 35V | - | 2.8°C/W Jc | -65°C ~ 150°C | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
| MBRD835LT4 | ON SEMICONDUCTOR | Schottky | 35V | 8A | 510mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1.4mA @ 35V | - | 2.8°C/W Jc | -65°C ~ 150°C | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
| MBRD835L | ON SEMICONDUCTOR | Schottky | 35V | 8A | 510mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1.4mA @ 35V | - | 2.8°C/W Jc | -65°C ~ 150°C | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
| TRS6E65C,S1Q | TOSHIBA CORP | Silicon Carbide Schottky | 650V | 6A (DC) | 1.7V @ 6A | Fast Recovery =< 500ns, > 200mA (Io) | - | 90µA @ 650V | 35pF @ 650V, 1MHz | 2.8°C/W Jc | 175°C (Max) | Through Hole | TO-220-2 |
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