| Part Numbers | Manufacturer Name | Datasheet | Diode Type | Reverse DC Voltage(Vr) | Current - Average Rectified (Io) | Forward Voltage (Vf) | Speed | Reverse Recovery Time (trr) | Reverse Leakage Current @ Vr | Capacitance @ Vr, F | Thermal Resistance | Operating Temperature - Junction | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 1N3643 | MICROSEMI COMMERCIAL BUSINESS UNIT | Standard | 1000V (1kV) | 250mA | 5V @ 250mA | Standard Recovery >500ns, > 200mA (Io) | - | 100µA @ 1000V | - | 38°C/W Jl | -65°C ~ 175°C | Through Hole | S, Axial | |
| MR2510 | ON SEMICONDUCTOR | Standard | 1000V (1kV) | 25A | 1.18V @ 78.5A | Standard Recovery >500ns, > 200mA (Io) | - | 100µA @ 1000V | - | 1°C/W Jc | -65°C ~ 175°C | Surface Mount | Microde Button | |
| VS-20ETS08PBF | VISHAY SEMICONDUCTORS | Standard | 800V | 20A | 1.1V @ 20A | Standard Recovery >500ns, > 200mA (Io) | - | 100µA @ 1000V | - | 0.5°C/W Cs | -40°C ~ 150°C | Through Hole | TO-220-2 |
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