20A (DC),Current - Average Rectified (Io)
-,Reverse Recovery Time (trr)
7 parts found
Part Numbers Manufacturer Name Datasheet Diode Type Reverse DC Voltage(Vr) Current - Average Rectified (Io) Forward Voltage (Vf) Speed Reverse Recovery Time (trr) Reverse Leakage Current @ Vr Capacitance @ Vr, F Thermal Resistance Operating Temperature - Junction Mounting Type Package / Case
TRS20N65D,S1F TOSHIBA CORP
1 Pair Common Cathode 650V 20A (DC) 1.7V @ 10A Fast Recovery =< 500ns, > 200mA (Io) - 90µA @ 650V 55pF @ 650V, 1MHz 0.9°C/W Jc 175°C (Max) - -
SIDC06D60AC6 INFINEON TECHNOLOGIES AG
Standard 600V 20A (DC) 1.95V @ 20A Standard Recovery >500ns, > 200mA (Io) - 27µA @ 600V - - -40°C ~ 175°C Surface Mount Wafer
SIDC06D60C6 INFINEON TECHNOLOGIES AG
Standard 600V 20A (DC) 1.95V @ 20A Standard Recovery >500ns, > 200mA (Io) - 27µA @ 600V - - -40°C ~ 175°C Surface Mount Wafer
VBT2045BP-E3/4W VISHAY SEMICONDUCTORS
Schottky 45V 20A (DC) 660mV @ 20A Fast Recovery =< 500ns, > 200mA (Io) - 2mA @ 45V - 1.5°C/W Jc 200°C (Max) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
VBT2045BP-E3/8W VISHAY SEMICONDUCTORS
Schottky 45V 20A (DC) 660mV @ 20A Fast Recovery =< 500ns, > 200mA (Io) - 2mA @ 45V - 1.5°C/W Jc 200°C (Max) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
VT2045BP-M3/4W VISHAY SEMICONDUCTORS
Schottky 45V 20A (DC) 660mV @ 20A Fast Recovery =< 500ns, > 200mA (Io) - 2mA @ 45V - 1.5°C/W Jc 200°C (Max) Through Hole TO-220-2
VFT2045BP-M3/4W VISHAY SEMICONDUCTORS
Schottky 45V 20A (DC) 660mV @ 20A Fast Recovery =< 500ns, > 200mA (Io) - 2mA @ 45V - 4.5°C/W Jc 200°C (Max) Through Hole TO-220-2