-,Reverse Recovery Time (trr)
350µA @ 100V, Reverse Leakage Current @ Vr
TO-220-3 Isolated Tab,Package / Case
4 parts found
Part Numbers Manufacturer Name Datasheet Diode Type Reverse DC Voltage(Vr) Current - Average Rectified (Io) Forward Voltage (Vf) Speed Reverse Recovery Time (trr) Reverse Leakage Current @ Vr Capacitance @ Vr, F Thermal Resistance Operating Temperature - Junction Mounting Type Package / Case
VF30100SG-E3/4W VISHAY SEMICONDUCTORS
Schottky 100V 30A 1V @ 30A Fast Recovery =< 500ns, > 200mA (Io) - 350µA @ 100V - 4°C/W Jc -40°C ~ 150°C Through Hole TO-220-3 Isolated Tab
VF20100SG-E3/4W VISHAY SEMICONDUCTORS
Schottky 100V 20A 1.07V @ 20A Fast Recovery =< 500ns, > 200mA (Io) - 350µA @ 100V - 4°C/W Jc -40°C ~ 150°C Through Hole TO-220-3 Isolated Tab
VF20100SG-E3/45 VISHAY SEMICONDUCTORS
Schottky 100V 20A 1.07V @ 20A Fast Recovery =< 500ns, > 200mA (Io) - 350µA @ 100V - 4°C/W Jc -40°C ~ 150°C Through Hole TO-220-3 Isolated Tab
VF30100SG-E3/45 VISHAY SEMICONDUCTORS
Schottky 100V 30A 1V @ 30A Fast Recovery =< 500ns, > 200mA (Io) - 350µA @ 100V - 4°C/W Jc -40°C ~ 150°C Through Hole TO-220-3 Isolated Tab