-,Reverse Recovery Time (trr)
2°C/W Jc,Thermal Resistance
TO-220-3,Package / Case
19 parts found
Part Numbers Manufacturer Name Datasheet Diode Type Reverse DC Voltage(Vr) Current - Average Rectified (Io) Forward Voltage (Vf) Speed Reverse Recovery Time (trr) Reverse Leakage Current @ Vr Capacitance @ Vr, F Thermal Resistance Operating Temperature - Junction Mounting Type Package / Case
NTST30100SG ON SEMICONDUCTOR
Standard 100V 30A 950mV @ 30A Standard Recovery >500ns, > 200mA (Io) - 1mA @ 100V - 2°C/W Jc -40°C ~ 150°C Through Hole TO-220-3
V20100S-E3/4W VISHAY SEMICONDUCTORS
Schottky 100V 20A 900mV @ 20A Fast Recovery =< 500ns, > 200mA (Io) - 500µA @ 100V - 2°C/W Jc -40°C ~ 150°C Through Hole TO-220-3
SBL1030-E3/45 VISHAY SEMICONDUCTORS
Schottky 30V 10A 600mV @ 10A Fast Recovery =< 500ns, > 200mA (Io) - 1mA @ 30V - 2°C/W Jc -40°C ~ 125°C Through Hole TO-220-3
M2035S-E3/4W VISHAY SEMICONDUCTORS
Schottky 35V 20A 700mV @ 20A Fast Recovery =< 500ns, > 200mA (Io) - 200µA @ 35V - 2°C/W Jc -55°C ~ 150°C Through Hole TO-220-3
M2045S-E3/4W VISHAY SEMICONDUCTORS
Schottky 45V 20A 700mV @ 20A Fast Recovery =< 500ns, > 200mA (Io) - 200µA @ 45V - 2°C/W Jc -55°C ~ 150°C Through Hole TO-220-3
V10150S-E3/4W VISHAY SEMICONDUCTORS
Schottky 150V 10A 1.2V @ 10A Fast Recovery =< 500ns, > 200mA (Io) - 150µA @ 150V - 2°C/W Jc -55°C ~ 150°C Through Hole TO-220-3
V20100SG-E3/4W VISHAY SEMICONDUCTORS
Schottky 100V 20A 1.07V @ 20A Fast Recovery =< 500ns, > 200mA (Io) - 350µA @ 100V - 2°C/W Jc -40°C ~ 150°C Through Hole TO-220-3
SBL1030HE3/45 VISHAY SEMICONDUCTORS
Schottky 30V 10A 600mV @ 10A Fast Recovery =< 500ns, > 200mA (Io) - 1mA @ 30V - 2°C/W Jc -40°C ~ 125°C Through Hole TO-220-3
V20120S-E3/4W VISHAY SEMICONDUCTORS
Schottky 120V 20A 1.12V @ 20A Fast Recovery =< 500ns, > 200mA (Io) - 300µA @ 120V - 2°C/W Jc -40°C ~ 150°C Through Hole TO-220-3
V20120SG-E3/4W VISHAY SEMICONDUCTORS
Schottky 120V 20A 1.33V @ 20A Fast Recovery =< 500ns, > 200mA (Io) - 250µA @ 120V - 2°C/W Jc -40°C ~ 150°C Through Hole TO-220-3