| Part Numbers | Manufacturer Name | Datasheet | Diode Type | Reverse DC Voltage(Vr) | Current - Average Rectified (Io) | Forward Voltage (Vf) | Speed | Reverse Recovery Time (trr) | Reverse Leakage Current @ Vr | Capacitance @ Vr, F | Thermal Resistance | Operating Temperature - Junction | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| FES16AT | FAIRCHILD SEMICONDUCTOR CORP | Standard | 50V | 16A | 950mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 50V | 170pF @ 4V, 1MHz | 1.2°C/W Jc | -65°C ~ 150°C | Through Hole | TO-220-2 | |
| FES16BT | FAIRCHILD SEMICONDUCTOR CORP | Standard | 100V | 16A | 950mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 100V | 170pF @ 4V, 1MHz | 1.2°C/W Jl | -65°C ~ 150°C | Through Hole | TO-220-2 | |
| FES16BTR | FAIRCHILD SEMICONDUCTOR CORP | Standard | 100V | 16A | 950mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 100V | 170pF @ 4V, 1MHz | 1.2°C/W Jl | -65°C ~ 150°C | Through Hole | TO-220-2 | |
| FES16ATR | FAIRCHILD SEMICONDUCTOR CORP | Standard | 50V | 16A | 950mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 50V | 170pF @ 4V, 1MHz | 1.2°C/W Jl | -65°C ~ 150°C | Through Hole | TO-220-2 | |
| FES16CT | FAIRCHILD SEMICONDUCTOR CORP | Standard | 150V | 16A | 950mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 150V | 170pF @ 4V, 1MHz | 1.2°C/W Jl | -65°C ~ 150°C | Through Hole | TO-220-2 | |
| FES16DTR | FAIRCHILD SEMICONDUCTOR CORP | Standard | 200V | 16A | 950mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 200V | 170pF @ 4V, 1MHz | 1.2°C/W Jl | -65°C ~ 150°C | Through Hole | TO-220-2 | |
| FES16CTR | FAIRCHILD SEMICONDUCTOR CORP | Standard | 150V | 16A | 950mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 150V | 170pF @ 4V, 1MHz | 1.2°C/W Jl | -65°C ~ 150°C | Through Hole | TO-220-2 | |
| FES16DT | FAIRCHILD SEMICONDUCTOR CORP | Standard | 200V | 16A | 950mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 200V | 170pF @ 4V, 1MHz | 1.2°C/W Jl | -65°C ~ 150°C | Through Hole | TO-220-2 | |
| FES8DT-E3/45 | VISHAY SEMICONDUCTORS | Standard | 200V | 8A | 950mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 200V | - | 2.2°C/W Jc | -55°C ~ 150°C | Through Hole | TO-220-2 | |
| FES8BT-E3/45 | VISHAY SEMICONDUCTORS | Standard | 100V | 8A | 950mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 100V | - | 2.2°C/W Jc | -55°C ~ 150°C | Through Hole | TO-220-2 |
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