UG4D-E3/54 |
VISHAY SEMICONDUCTORS |
|
Standard
|
200V
|
4A
|
950mV @ 4A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
30ns
|
5µA @ 200V
|
20pF @ 4V, 1MHz
|
25°C/W Ja
|
-55°C ~ 150°C
|
Through Hole
|
DO-201AD, Axial
|
UG4A-E3/73 |
VISHAY SEMICONDUCTORS |
|
Standard
|
50V
|
4A
|
950mV @ 4A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
30ns
|
5µA @ 50V
|
20pF @ 4V, 1MHz
|
25°C/W Ja
|
-55°C ~ 150°C
|
Through Hole
|
DO-201AD, Axial
|
UG4B-E3/73 |
VISHAY SEMICONDUCTORS |
|
Standard
|
100V
|
4A
|
950mV @ 4A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
30ns
|
5µA @ 100V
|
20pF @ 4V, 1MHz
|
25°C/W Ja
|
-55°C ~ 150°C
|
Through Hole
|
DO-201AD, Axial
|
UG4C-E3/73 |
VISHAY SEMICONDUCTORS |
|
Standard
|
150V
|
4A
|
950mV @ 4A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
30ns
|
5µA @ 150V
|
20pF @ 4V, 1MHz
|
25°C/W Ja
|
-55°C ~ 150°C
|
Through Hole
|
DO-201AD, Axial
|
UG4D-E3/73 |
VISHAY SEMICONDUCTORS |
|
Standard
|
200V
|
4A
|
950mV @ 4A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
30ns
|
5µA @ 200V
|
20pF @ 4V, 1MHz
|
25°C/W Ja
|
-55°C ~ 150°C
|
Through Hole
|
DO-201AD, Axial
|
UG4A-E3/54 |
VISHAY SEMICONDUCTORS |
|
Standard
|
50V
|
4A
|
950mV @ 4A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
30ns
|
5µA @ 50V
|
20pF @ 4V, 1MHz
|
25°C/W Ja
|
-55°C ~ 150°C
|
Through Hole
|
DO-201AD, Axial
|
UG4B-E3/54 |
VISHAY SEMICONDUCTORS |
|
Standard
|
100V
|
4A
|
950mV @ 4A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
30ns
|
5µA @ 100V
|
20pF @ 4V, 1MHz
|
25°C/W Ja
|
-55°C ~ 150°C
|
Through Hole
|
DO-201AD, Axial
|
UG4C-E3/54 |
VISHAY SEMICONDUCTORS |
|
Standard
|
150V
|
4A
|
950mV @ 4A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
30ns
|
5µA @ 150V
|
20pF @ 4V, 1MHz
|
25°C/W Ja
|
-55°C ~ 150°C
|
Through Hole
|
DO-201AD, Axial
|