GB02SLT12-220 |
GENESIC SEMICONDUCTOR INC |
|
Silicon Carbide Schottky
|
1200V (1.2kV)
|
2A
|
2V @ 2A
|
No Recovery Time > 500mA (Io)
|
0ns
|
4µA @ 1200V
|
138pF @ 1V, 1MHz
|
2.32°C/W Jc
|
-55°C ~ 175°C
|
Through Hole
|
TO-220-2
|
CMF01(TE12L,Q,M) |
TOSHIBA CORP |
|
Standard
|
600V
|
2A
|
2V @ 2A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
100ns
|
50µA @ 600V
|
-
|
16°C/W Jl
|
-40°C ~ 150°C
|
Surface Mount
|
SOD-128
|
GB02SLT12-252 |
GENESIC SEMICONDUCTOR INC |
|
Silicon Carbide Schottky
|
1200V (1.2kV)
|
2A
|
2V @ 2A
|
No Recovery Time > 500mA (Io)
|
0ns
|
4µA @ 1200V
|
138pF @ 1V, 1MHz
|
2.3°C/W Jc
|
-55°C ~ 175°C
|
Surface Mount
|
TO-252-3, DPak (2 Leads + Tab), SC-63
|
DGS3-030AS |
IXYS CORP |
|
Schottky
|
300V
|
5A
|
2V @ 2A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
-
|
700µA @ 300V
|
-
|
8.5°C/W Jc
|
-55°C ~ 175°C
|
Surface Mount
|
TO-252-3, DPak (2 Leads + Tab), SC-63
|