GB10SLT12-220 |
GENESIC SEMICONDUCTOR INC |
|
Silicon Carbide Schottky
|
1200V (1.2kV)
|
10A
|
2V @ 10A
|
No Recovery Time > 500mA (Io)
|
0ns
|
40µA @ 1200V
|
520pF @ 1V, 1MHz
|
0.8°C/W Jc
|
-55°C ~ 175°C
|
Through Hole
|
TO-220-2
|
STTH10LCD06FP |
STMICROELECTRONICS |
|
Standard
|
600V
|
10A
|
2V @ 10A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
50ns
|
5µA @ 600V
|
-
|
6°C/W Jc
|
175°C (Max)
|
Through Hole
|
TO-220-2 Full Pack
|
CPW3-1700-S010B-WP |
CREE INC |
|
Silicon Carbide Schottky
|
1700V (1.7kV)
|
10A
|
2V @ 10A
|
No Recovery Time > 500mA (Io)
|
0ns
|
50µA @ 1700V
|
880pF @ 0V, 1MHz
|
-
|
-55°C ~ 175°C
|
Surface Mount
|
Wafer, Sawn on Foil
|
C3D10170H |
CREE INC |
|
Silicon Carbide Schottky
|
1700V (1.7kV)
|
14.4A (DC)
|
2V @ 10A
|
No Recovery Time > 500mA (Io)
|
0ns
|
60µA @ 1700V
|
827pF @ 0V, 1MHz
|
0.65°C/W Jc
|
-55°C ~ 175°C
|
Through Hole
|
TO-247-2
|
GB10SLT12-252 |
GENESIC SEMICONDUCTOR INC |
|
Silicon Carbide Schottky
|
1200V (1.2kV)
|
10A
|
2V @ 10A
|
No Recovery Time > 500mA (Io)
|
0ns
|
40µA @ 1200V
|
520pF @ 1V, 1MHz
|
0.8°C/W Jc
|
-55°C ~ 175°C
|
Surface Mount
|
TO-252-3, DPak (2 Leads + Tab), SC-63
|
STTH10LCD06SG-TR |
STMICROELECTRONICS |
|
Standard
|
600V
|
10A
|
2V @ 10A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
50ns
|
5µA @ 600V
|
-
|
3.5°C/W Jc
|
175°C (Max)
|
Surface Mount
|
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
|
STTH10LCD06SB-TR |
STMICROELECTRONICS |
|
Standard
|
600V
|
10A
|
2V @ 10A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
50ns
|
5µA @ 600V
|
-
|
3.5°C/W Jc
|
175°C (Max)
|
Surface Mount
|
TO-252-3, DPak (2 Leads + Tab), SC-63
|