| Part Numbers | Manufacturer Name | Datasheet | Diode Type | Reverse DC Voltage(Vr) | Current - Average Rectified (Io) | Forward Voltage (Vf) | Speed | Reverse Recovery Time (trr) | Reverse Leakage Current @ Vr | Capacitance @ Vr, F | Thermal Resistance | Operating Temperature - Junction | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| DSEP8-06A | IXYS CORP | Standard | 600V | 10A | 2.1V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 60µA @ 600V | - | 0.5°C/W Cs | -55°C ~ 175°C | Through Hole | TO-220-2 | |
| IDH10SG60C | INFINEON TECHNOLOGIES AG | Silicon Carbide Schottky | 600V | 10A (DC) | 2.1V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 90µA @ 600V | 290pF @ 1V, 1MHz | 1.25°C/W Jc | -55°C ~ 175°C | Through Hole | TO-220-2 | |
| IDD10SG60C | INFINEON TECHNOLOGIES AG | Silicon Carbide Schottky | 600V | 10A (DC) | 2.1V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 90µA @ 600V | 290pF @ 1V, 1MHz | 1.25°C/W Jc | -55°C ~ 175°C | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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