| Part Numbers | Manufacturer Name | Datasheet | Diode Type | Reverse DC Voltage(Vr) | Current - Average Rectified (Io) | Forward Voltage (Vf) | Speed | Reverse Recovery Time (trr) | Reverse Leakage Current @ Vr | Capacitance @ Vr, F | Thermal Resistance | Operating Temperature - Junction | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| RURP8100 | FAIRCHILD SEMICONDUCTOR CORP | Standard | 1000V (1kV) | 8A | 1.8V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 100ns | 100µA @ 1000V | - | 2°C/W Jc | -55°C ~ 175°C | Through Hole | TO-220-2 | |
| MUR8100EG | ON SEMICONDUCTOR | Standard | 1000V (1kV) | 8A | 1.8V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 100ns | 25µA @ 1000V | - | 2°C/W Jc | -65°C ~ 175°C | Through Hole | TO-220-2 | |
| MUR880EG | ON SEMICONDUCTOR | Standard | 800V | 8A | 1.8V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 100ns | 25µA @ 800V | - | 2°C/W Jc | -65°C ~ 175°C | Through Hole | TO-220-2 | |
| C3D08065A | CREE INC | Silicon Carbide Schottky | 650V | 8A | 1.8V @ 8A | No Recovery Time > 500mA (Io) | 0ns | 60µA @ 650V | 441pF @ 0V, 1MHz | 1.5°C/W Jc | -55°C ~ 175°C | Through Hole | TO-220-2 | |
| C3D08065I | CREE INC | Silicon Carbide Schottky | 650V | 8A (DC) | 1.8V @ 8A | No Recovery Time > 500mA (Io) | 0ns | 60µA @ 650V | 441pF @ 0V, 1MHz | 3.1°C/W Jc | -55°C ~ 175°C | Through Hole | TO-220-2 Isolated Tab | |
| CSD08060A | CREE INC | Silicon Carbide Schottky | 600V | 12.5A | 1.8V @ 8A | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 600V | 470pF @ 0V, 1MHz | 1.4°C/W Jc | -55°C ~ 175°C | Through Hole | TO-220-2 | |
| C3D08060A | CREE INC | Silicon Carbide Schottky | 600V | 8A | 1.8V @ 8A | No Recovery Time > 500mA (Io) | 0ns | 50µA @ 600V | 441pF @ 0V, 1MHz | 1.5°C/W Jc | -55°C ~ 175°C | Through Hole | TO-220-2 | |
| C3D08060G | CREE INC | Silicon Carbide Schottky | 600V | 8A | 1.8V @ 8A | No Recovery Time > 500mA (Io) | 0ns | 50µA @ 600V | 441pF @ 0V, 1MHz | 1.4°C/W Jc | -55°C ~ 175°C | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | |
| MUR8100E | FAIRCHILD SEMICONDUCTOR CORP | Standard | 1000V (1kV) | 8A | 1.8V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 100ns | 100µA @ 1000V | - | 2°C/W Jc | -55°C ~ 175°C | Through Hole | TO-220-2 | |
| MUR880E | ON SEMICONDUCTOR | Standard | 800V | 8A | 1.8V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 100ns | 25µA @ 800V | - | 2°C/W Jc | -65°C ~ 175°C | Through Hole | TO-220-2 |
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