| Part Numbers | Manufacturer Name | Datasheet | Diode Type | Reverse DC Voltage(Vr) | Current - Average Rectified (Io) | Forward Voltage (Vf) | Speed | Reverse Recovery Time (trr) | Reverse Leakage Current @ Vr | Capacitance @ Vr, F | Thermal Resistance | Operating Temperature - Junction | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| C4D08120A | CREE INC | Silicon Carbide Schottky | 1200V (1.2kV) | 11.3A | 1.8V @ 7.5A | No Recovery Time > 500mA (Io) | 0ns | 250µA @ 1200V | 560pF @ 0V, 1MHz | 1.26°C/W Jc | -55°C ~ 175°C | Through Hole | TO-220-2 | |
| IDH08S120 | INFINEON TECHNOLOGIES AG | Silicon Carbide Schottky | 1200V (1.2kV) | 7.5A (DC) | 1.8V @ 7.5A | No Recovery Time > 500mA (Io) | 0ns | 180µA @ 1200V | 380pF @ 1V, 1MHz | 1.5°C/W Jc | -55°C ~ 175°C | Through Hole | TO-220-2 |
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