| Part Numbers | Manufacturer Name | Datasheet | Diode Type | Reverse DC Voltage(Vr) | Current - Average Rectified (Io) | Forward Voltage (Vf) | Speed | Reverse Recovery Time (trr) | Reverse Leakage Current @ Vr | Capacitance @ Vr, F | Thermal Resistance | Operating Temperature - Junction | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| C4D05120A | CREE INC | Silicon Carbide Schottky | 1200V (1.2kV) | 8.2A | 1.8V @ 5A | No Recovery Time > 500mA (Io) | 0ns | 150µA @ 1200V | 390pF @ 0V, 1MHz | 1.85°C/W Jc | -55°C ~ 175°C | Through Hole | TO-220-2 | |
| C4D05120E | CREE INC | Silicon Carbide Schottky | 1200V (1.2kV) | 8.2A | 1.8V @ 5A | No Recovery Time > 500mA (Io) | 0ns | 150µA @ 1200V | 390pF @ 0V, 1MHz | 1.55°C/W Jc | -55°C ~ 175°C | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
| C2D05120E | CREE INC | Silicon Carbide Schottky | 1200V (1.2kV) | 10A | 1.8V @ 5A | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 1200V | 455pF @ 0V, 1MHz | - | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
| C2D05120A | CREE INC | Silicon Carbide Schottky | 1200V (1.2kV) | 10A | 1.8V @ 5A | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 1200V | 455pF @ 0V, 1MHz | 1°C/W Jc | -55°C ~ 175°C | Through Hole | TO-220-2 | |
| IDH05S120 | INFINEON TECHNOLOGIES AG | Silicon Carbide Schottky | 1200V (1.2kV) | 5A (DC) | 1.8V @ 5A | No Recovery Time > 500mA (Io) | 0ns | 120µA @ 1200V | 250pF @ 1V, 1MHz | 2°C/W Jc | -55°C ~ 175°C | Through Hole | TO-220-2 | |
| CLH07(TE16L,Q) | TOSHIBA CORP | Standard | 400V | 5A | 1.8V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 400V | - | 5°C/W Jl | -40°C ~ 150°C | Surface Mount | - | |
| GUR5H60-E3/45 | VISHAY SEMICONDUCTORS | Standard | 600V | 5A | 1.8V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 20µA @ 600V | - | 2°C/W Jc | -55°C ~ 150°C | Through Hole | TO-220-2 | |
| GURF5H60-E3/45 | VISHAY SEMICONDUCTORS | Standard | 600V | 5A | 1.8V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 20µA @ 600V | - | 3°C/W Jc | -55°C ~ 150°C | Through Hole | TO-220-2 Full Pack, Isolated Tab | |
| GUR5H60HE3/45 | VISHAY SEMICONDUCTORS | Standard | 600V | 5A | 1.8V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 20µA @ 600V | - | 2°C/W Jc | -55°C ~ 150°C | Through Hole | TO-220-2 | |
| GURB5H60HE3/81 | VISHAY SEMICONDUCTORS | Standard | 600V | 5A | 1.8V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 20µA @ 600V | - | 2°C/W Jc | -55°C ~ 150°C | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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