| Part Numbers | Manufacturer Name | Datasheet | Diode Type | Reverse DC Voltage(Vr) | Current - Average Rectified (Io) | Forward Voltage (Vf) | Speed | Reverse Recovery Time (trr) | Reverse Leakage Current @ Vr | Capacitance @ Vr, F | Thermal Resistance | Operating Temperature - Junction | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| APT30SCD120S | MICROSEMI POWER PRODUCTS GROUP | Silicon Carbide Schottky | 1200V (1.2kV) | 99A (DC) | 1.8V @ 30A | No Recovery Time > 500mA (Io) | 0ns | 600µA @ 1200V | 2100pF @ 0V, 1MHz | 0.43°C/W Jc | -55°C ~ 150°C | Surface Mount | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA | |
| APT30D60BG | MICROSEMI POWER PRODUCTS GROUP | Standard | 600V | 30A | 1.8V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 85ns | 250µA @ 600V | - | 0.67°C/W Jc | -55°C ~ 175°C | Through Hole, Radial | TO-247-2 | |
| BYC30X-600P,127 | NXP SEMICONDUCTORS | Standard | 600V | 30A | 1.8V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 600V | - | 3.5°C/W Jh | 175°C (Max) | Through Hole | TO-220-2 Full Pack, Isolated Tab |
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