| Part Numbers | Manufacturer Name | Datasheet | Diode Type | Reverse DC Voltage(Vr) | Current - Average Rectified (Io) | Forward Voltage (Vf) | Speed | Reverse Recovery Time (trr) | Reverse Leakage Current @ Vr | Capacitance @ Vr, F | Thermal Resistance | Operating Temperature - Junction | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GB02SLT12-214 | GENESIC SEMICONDUCTOR INC | Silicon Carbide Schottky | 1200V (1.2kV) | 2A (DC) | 1.8V @ 2A | No Recovery Time > 500mA (Io) | 0ns | 50µA @ 1200V | 131pF @ 1V, 1MHz | 2.3°C/W Jc | -55°C ~ 175°C | - | - | |
| CSD02060A | CREE INC | Silicon Carbide Schottky | 600V | 3.5A | 1.8V @ 2A | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 600V | 120pF @ 0V, 1MHz | 4.7°C/W Jc | -55°C ~ 175°C | Through Hole | TO-220-2 | |
| CSD02060G | CREE INC | Silicon Carbide Schottky | 600V | 3.5A | 1.8V @ 2A | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 600V | 120pF @ 0V, 1MHz | 4.7°C/W Jc | -55°C ~ 175°C | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | |
| C4D02120E | CREE INC | Silicon Carbide Schottky | 1200V (1.2kV) | 6.9A (DC) | 1.8V @ 2A | No Recovery Time > 500mA (Io) | 0ns | 50µA @ 1200V | 167pF @ 0V, 1MHz | 2.9°C/W Jc | -55°C ~ 175°C | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
| C4D02120A | CREE INC | Silicon Carbide Schottky | 1200V (1.2kV) | 5.9A | 1.8V @ 2A | No Recovery Time > 500mA (Io) | 0ns | 50µA @ 1200V | 167pF @ 0V, 1MHz | 3.7°C/W Jc | -55°C ~ 175°C | Through Hole | TO-220-2 | |
| IDH02SG120 | INFINEON TECHNOLOGIES AG | Silicon Carbide Schottky | 1200V (1.2kV) | 2A (DC) | 1.8V @ 2A | No Recovery Time > 500mA (Io) | 0ns | 48µA @ 1200V | 125pF @ 1V, 1MHz | 2°C/W Jc | -55°C ~ 175°C | Through Hole | TO-220-2 | |
| CMH08A(TE12L,Q,M) | TOSHIBA CORP | Standard | 400V | 2A | 1.8V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 400V | - | 16°C/W Jl | -40°C ~ 150°C | Surface Mount | SOD-128 |
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