| Part Numbers | Manufacturer Name | Datasheet | Diode Type | Reverse DC Voltage(Vr) | Current - Average Rectified (Io) | Forward Voltage (Vf) | Speed | Reverse Recovery Time (trr) | Reverse Leakage Current @ Vr | Capacitance @ Vr, F | Thermal Resistance | Operating Temperature - Junction | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| C4D20120A | CREE INC | Silicon Carbide Schottky | 1200V (1.2kV) | 20A | 1.8V @ 20A | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 1200V | 1500pF @ 0V, 1MHz | 0.62°C/W Jc | -55°C ~ 175°C | Through Hole | TO-220 (2 Leads + Tab) | |
| APT20SCD120S | MICROSEMI POWER PRODUCTS GROUP | Silicon Carbide Schottky | 1200V (1.2kV) | 68A (DC) | 1.8V @ 20A | No Recovery Time > 500mA (Io) | 0ns | 400µA @ 1200V | 1135pF @ 0V, 1MHz | 0.6°C/W Jc | -55°C ~ 150°C | Surface Mount | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA | |
| APT20SCD65K | MICROSEMI POWER PRODUCTS GROUP | Silicon Carbide Schottky | 650V | 32A | 1.8V @ 20A | No Recovery Time > 500mA (Io) | 0ns | 400µA @ 650V | 680pF @ 100mV, 1MHz | - | - | Through Hole | TO-220-2 | |
| BY359-1500,127 | NXP SEMICONDUCTORS | Standard | 1500V (1.5kV) | 10A (DC) | 1.8V @ 20A | Standard Recovery >500ns, > 200mA (Io) | 600ns | 100µA @ 1300V | - | 2°C/W Jl | 150°C (Max) | Through Hole | TO-220-2 | |
| BY359X-1500,127 | NXP SEMICONDUCTORS | Standard | 1500V (1.5kV) | 10A (DC) | 1.8V @ 20A | Standard Recovery >500ns, > 200mA (Io) | 600ns | 100µA @ 1300V | - | 4.8°C/W Jh | 150°C (Max) | Through Hole | TO-220-2 Full Pack, Isolated Tab |
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