CSD10060A |
CREE INC |
|
Silicon Carbide Schottky
|
600V
|
16.5A
|
1.8V @ 10A
|
No Recovery Time > 500mA (Io)
|
0ns
|
200µA @ 600V
|
550pF @ 0V, 1MHz
|
1.1°C/W Jc
|
-55°C ~ 175°C
|
Through Hole
|
TO-220-2
|
CSD10060G |
CREE INC |
|
Silicon Carbide Schottky
|
600V
|
16.5A
|
1.8V @ 10A
|
No Recovery Time > 500mA (Io)
|
0ns
|
200µA @ 600V
|
550pF @ 0V, 1MHz
|
1.1°C/W Jc
|
-55°C ~ 175°C
|
Surface Mount
|
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
|
C3D10065A |
CREE INC |
|
Silicon Carbide Schottky
|
650V
|
10A
|
1.8V @ 10A
|
No Recovery Time > 500mA (Io)
|
0ns
|
60µA @ 650V
|
480pF @ 0V, 1MHz
|
1.1°C/W Jc
|
-55°C ~ 175°C
|
Through Hole
|
TO-220-2
|
C4D10120A |
CREE INC |
|
Silicon Carbide Schottky
|
1200V (1.2kV)
|
14A
|
1.8V @ 10A
|
No Recovery Time > 500mA (Io)
|
0ns
|
250µA @ 1200V
|
754pF @ 0V, 1MHz
|
1.1°C/W Jc
|
-55°C ~ 175°C
|
Through Hole
|
TO-220-2
|
C3D10060A |
CREE INC |
|
Silicon Carbide Schottky
|
600V
|
10A
|
1.8V @ 10A
|
No Recovery Time > 500mA (Io)
|
0ns
|
50µA @ 600V
|
480pF @ 0V, 1MHz
|
1.1°C/W Jc
|
-55°C ~ 175°C
|
Through Hole
|
TO-220-2
|
C3D10060G |
CREE INC |
|
Silicon Carbide Schottky
|
600V
|
10A
|
1.8V @ 10A
|
No Recovery Time > 500mA (Io)
|
0ns
|
50µA @ 600V
|
480pF @ 0V, 1MHz
|
1.2°C/W Jc
|
-55°C ~ 175°C
|
Surface Mount
|
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
|
C4D10120E |
CREE INC |
|
Silicon Carbide Schottky
|
1200V (1.2kV)
|
14A
|
1.8V @ 10A
|
No Recovery Time > 500mA (Io)
|
0ns
|
250µA @ 1200V
|
754pF @ 0V, 1MHz
|
0.88°C/W Jc
|
-55°C ~ 175°C
|
Surface Mount
|
TO-252-3, DPak (2 Leads + Tab), SC-63
|
C2D10120A |
CREE INC |
|
Silicon Carbide Schottky
|
1200V (1.2kV)
|
17A
|
1.8V @ 10A
|
No Recovery Time > 500mA (Io)
|
0ns
|
200µA @ 1200V
|
1000pF @ 0V, 1MHz
|
0.48°C/W Jc
|
-55°C ~ 175°C
|
Through Hole
|
TO-220-2
|
FFPF10U150STU |
FAIRCHILD SEMICONDUCTOR CORP |
|
Standard
|
1500V (1.5kV)
|
10A
|
1.8V @ 10A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
150ns
|
15µA @ 1500V
|
-
|
2°C/W Jc
|
-65°C ~ 150°C
|
Through Hole
|
TO-220-2 Full Pack, Isolated Tab
|
IDY10S120 |
INFINEON TECHNOLOGIES AG |
|
Silicon Carbide Schottky
|
1200V (1.2kV)
|
5A (DC)
|
1.8V @ 10A
|
No Recovery Time > 500mA (Io)
|
0ns
|
120µA @ 1200V
|
250pF @ 1V, 1MHz
|
1°C/W Jc, 2°C/W Jc
|
-55°C ~ 175°C
|
Through Hole
|
TO-247-3 Variant
|