| Part Numbers | Manufacturer Name | Datasheet | Diode Type | Reverse DC Voltage(Vr) | Current - Average Rectified (Io) | Forward Voltage (Vf) | Speed | Reverse Recovery Time (trr) | Reverse Leakage Current @ Vr | Capacitance @ Vr, F | Thermal Resistance | Operating Temperature - Junction | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| STPSC606G-TR | STMICROELECTRONICS | Silicon Carbide Schottky | 600V | 6A | 1.7V @ 6A | No Recovery Time > 500mA (Io) | 0ns | 75µA @ 600V | 375pF @ 0V, 1MHz | 2.8°C/W Jc | -40°C ~ 175°C | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | |
| STPSC606D | STMICROELECTRONICS | Silicon Carbide Schottky | 600V | 6A | 1.7V @ 6A | No Recovery Time > 500mA (Io) | 0ns | 75µA @ 600V | 375pF @ 0V, 1MHz | 2.8°C/W Jc | -40°C ~ 175°C | Through Hole | TO-220-2 | |
| IDH06G65C5 | INFINEON TECHNOLOGIES AG | Silicon Carbide Schottky | 650V | 6A (DC) | 1.7V @ 6A | No Recovery Time > 500mA (Io) | 0ns | 210µA @ 650V | 190pF @ 1V, 1MHz | 2.4°C/W Jc | -55°C ~ 175°C | Through Hole | TO-220-2 | |
| IDB06S60C | INFINEON TECHNOLOGIES AG | Silicon Carbide Schottky | 600V | 6A (DC) | 1.7V @ 6A | No Recovery Time > 500mA (Io) | 0ns | 80µA @ 600V | 280pF @ 1V, 1MHz | 2.9°C/W Jc | -55°C ~ 175°C | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | |
| IDH06S60C | INFINEON TECHNOLOGIES AG | Silicon Carbide Schottky | 600V | 6A (DC) | 1.7V @ 6A | No Recovery Time > 500mA (Io) | 0ns | 80µA @ 600V | 280pF @ 1V, 1MHz | 2.4°C/W Jc | -55°C ~ 175°C | Through Hole | TO-220-2 | |
| IDV06S60C | INFINEON TECHNOLOGIES AG | Silicon Carbide Schottky | 600V | 6A (DC) | 1.7V @ 6A | No Recovery Time > 500mA (Io) | 0ns | 80µA @ 600V | 280pF @ 1V, 1MHz | 4.5°C/W Jc | -55°C ~ 175°C | Through Hole | TO-220-2 Full Pack | |
| SDP06S60 | INFINEON TECHNOLOGIES AG | Silicon Carbide Schottky | 600V | 6A (DC) | 1.7V @ 6A | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 600V | 300pF @ 0V, 1MHz | 2.6°C/W Jc | -55°C ~ 175°C | Through Hole | TO-220-3 | |
| SDT06S60 | INFINEON TECHNOLOGIES AG | Silicon Carbide Schottky | 600V | 6A (DC) | 1.7V @ 6A | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 600V | 300pF @ 0V, 1MHz | 2.6°C/W Jc | -55°C ~ 175°C | Through Hole | TO-220-2 | |
| SDB06S60 | INFINEON TECHNOLOGIES AG | Silicon Carbide Schottky | 600V | 6A (DC) | 1.7V @ 6A | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 600V | 300pF @ 0V, 1MHz | 2.6°C/W Jc | -55°C ~ 175°C | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | |
| SIDC19D60SIC3 | INFINEON TECHNOLOGIES AG | Silicon Carbide Schottky | 600V | 6A (DC) | 1.7V @ 6A | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 600V | 300pF @ 1V, 1MHz | - | -55°C ~ 175°C | Surface Mount | Wafer |
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