| Part Numbers | Manufacturer Name | Datasheet | Diode Type | Reverse DC Voltage(Vr) | Current - Average Rectified (Io) | Forward Voltage (Vf) | Speed | Reverse Recovery Time (trr) | Reverse Leakage Current @ Vr | Capacitance @ Vr, F | Thermal Resistance | Operating Temperature - Junction | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| IDH12S60C | INFINEON TECHNOLOGIES AG | Silicon Carbide Schottky | 600V | 12A (DC) | 1.7V @ 12A | No Recovery Time > 500mA (Io) | 0ns | 160µA @ 600V | 530pF @ 1V, 1MHz | 1.3°C/W Jc | -55°C ~ 175°C | Through Hole | TO-220-2 | |
| STPSC1206D | STMICROELECTRONICS | Silicon Carbide Schottky | 600V | 12A | 1.7V @ 12A | No Recovery Time > 500mA (Io) | 0ns | 150µA @ 600V | 750pF @ 0V, 1MHz | 1.75°C/W Jc | -40°C ~ 175°C | Through Hole | TO-220-2 | |
| TRS12E65C,S1Q | TOSHIBA CORP | Silicon Carbide Schottky | 650V | 12A (DC) | 1.7V @ 12A | Fast Recovery =< 500ns, > 200mA (Io) | - | 90µA @ 170V | 65pF @ 650V, 1MHz | 1.9°C/W Jc | 175°C (Max) | Through Hole | TO-220-2 | |
| IDW12G65C5 | INFINEON TECHNOLOGIES AG | Silicon Carbide Schottky | 650V | 12A (DC) | 1.7V @ 12A | No Recovery Time > 500mA (Io) | 0ns | 500µA @ 650V | 360pF @ 1V, 1MHz | 2°C/W Jc | -55°C ~ 175°C | Through Hole | TO-247-3 | |
| SDT12S60 | INFINEON TECHNOLOGIES AG | Silicon Carbide Schottky | 600V | 12A (DC) | 1.7V @ 12A | No Recovery Time > 500mA (Io) | 0ns | 400µA @ 600V | 450pF @ 1V, 1MHz | 1.7°C/W Jc | -55°C ~ 175°C | Through Hole | TO-220-2 | |
| SCS112AGC | ROHM CO LTD | Silicon Carbide Schottky | 600V | 12A | 1.7V @ 12A | No Recovery Time > 500mA (Io) | 0ns | 240µA @ 600V | 516pF @ 1V, 1MHz | 1.6°C/W Jc | 175°C (Max) | Through Hole | TO-220-2 | |
| TRS12N65D,S1F | TOSHIBA CORP | 1 Pair Common Cathode | 650V | 12A (DC) | 1.7V @ 12A | - | - | 90µA @ 650V | 35pF @ 650V, 1MHz | 1.15°C/W Jc | 175°C (Max) | - | - |
© 2016 Copyright
