RF1005TF6S |
ROHM CO LTD |
|
Standard
|
600V
|
10A
|
1.7V @ 10A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
40ns
|
10µA @ 600V
|
-
|
3.5°C/W Jc
|
150°C (Max)
|
Through Hole
|
TO-220-2 Full Pack
|
IDH10G65C5 |
INFINEON TECHNOLOGIES AG |
|
Silicon Carbide Schottky
|
650V
|
10A (DC)
|
1.7V @ 10A
|
No Recovery Time > 500mA (Io)
|
0ns
|
340µA @ 650V
|
300pF @ 1V, 1MHz
|
1.7°C/W Jc
|
-55°C ~ 175°C
|
Through Hole
|
TO-220-2
|
IDW10G65C5 |
INFINEON TECHNOLOGIES AG |
|
Silicon Carbide Schottky
|
650V
|
10A (DC)
|
1.7V @ 10A
|
No Recovery Time > 500mA (Io)
|
0ns
|
400µA @ 650V
|
300pF @ 1V, 1MHz
|
2.3°C/W Jc
|
-55°C ~ 175°C
|
Through Hole
|
TO-247-3
|
IDB10S60C |
INFINEON TECHNOLOGIES AG |
|
Silicon Carbide Schottky
|
600V
|
10A (DC)
|
1.7V @ 10A
|
No Recovery Time > 500mA (Io)
|
0ns
|
140µA @ 600V
|
480pF @ 1V, 1MHz
|
1.8°C/W Jc
|
-55°C ~ 175°C
|
Surface Mount
|
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
|
IDH10S60C |
INFINEON TECHNOLOGIES AG |
|
Silicon Carbide Schottky
|
600V
|
10A (DC)
|
1.7V @ 10A
|
No Recovery Time > 500mA (Io)
|
0ns
|
140µA @ 600V
|
480pF @ 1V, 1MHz
|
1.5°C/W Jc
|
-55°C ~ 175°C
|
Through Hole
|
TO-220-2
|
SDT10S30 |
INFINEON TECHNOLOGIES AG |
|
Silicon Carbide Schottky
|
300V
|
10A (DC)
|
1.7V @ 10A
|
No Recovery Time > 500mA (Io)
|
0ns
|
200µA @ 300V
|
600pF @ 0V, 1MHz
|
2.3°C/W Jc
|
-55°C ~ 175°C
|
Through Hole
|
TO-220-2
|
SDP10S30 |
INFINEON TECHNOLOGIES AG |
|
Silicon Carbide Schottky
|
300V
|
10A (DC)
|
1.7V @ 10A
|
No Recovery Time > 500mA (Io)
|
0ns
|
200µA @ 300V
|
600pF @ 0V, 1MHz
|
2.3°C/W Jc
|
-55°C ~ 175°C
|
Through Hole
|
TO-220-3
|
SDT10S60 |
INFINEON TECHNOLOGIES AG |
|
Silicon Carbide Schottky
|
600V
|
10A (DC)
|
1.7V @ 10A
|
No Recovery Time > 500mA (Io)
|
0ns
|
350µA @ 600V
|
350pF @ 0V, 1MHz
|
2°C/W Jc
|
-55°C ~ 175°C
|
Through Hole
|
TO-220-2
|
SIDC24D30SIC3 |
INFINEON TECHNOLOGIES AG |
|
Silicon Carbide Schottky
|
300V
|
10A (DC)
|
1.7V @ 10A
|
No Recovery Time > 500mA (Io)
|
0ns
|
200µA @ 300V
|
600pF @ 1V, 1MHz
|
-
|
-55°C ~ 175°C
|
Surface Mount
|
Wafer
|
SCS110AMC |
ROHM CO LTD |
|
Silicon Carbide Schottky
|
600V
|
10A (DC)
|
1.7V @ 10A
|
No Recovery Time > 500mA (Io)
|
0ns
|
200µA @ 600V
|
430pF @ 1V, 1MHz
|
4.4°C/W Jc
|
150°C (Max)
|
Through Hole
|
TO-220-2
|