1.4V @ 1.2A, Forward Voltage (Vf)
18 parts found
Part Numbers Manufacturer Name Datasheet Diode Type Reverse DC Voltage(Vr) Current - Average Rectified (Io) Forward Voltage (Vf) Speed Reverse Recovery Time (trr) Reverse Leakage Current @ Vr Capacitance @ Vr, F Thermal Resistance Operating Temperature - Junction Mounting Type Package / Case
1N6622 MICROSEMI COMMERCIAL BUSINESS UNIT
Standard 600V 1.2A 1.4V @ 1.2A Fast Recovery =< 500ns, > 200mA (Io) 45ns 500nA @ 600V - 38°C/W Jl -65°C ~ 150°C Through Hole A, Axial
1N6621 MICROSEMI COMMERCIAL BUSINESS UNIT
Standard 440V 1.2A 1.4V @ 1.2A Fast Recovery =< 500ns, > 200mA (Io) 30ns 500nA @ 440V 10pF @ 10V, 1MHz 38°C/W Jl -65°C ~ 150°C Through Hole A, Axial
1N6621US MICROSEMI COMMERCIAL BUSINESS UNIT
Standard 440V 1.2A 1.4V @ 1.2A Fast Recovery =< 500ns, > 200mA (Io) 30ns 500nA @ 440V 10pF @ 10V, 1MHz 13°C/W Jl -65°C ~ 150°C Surface Mount SQ-MELF, A
1N6620 MICROSEMI COMMERCIAL BUSINESS UNIT
Standard 220V 1.2A 1.4V @ 1.2A Fast Recovery =< 500ns, > 200mA (Io) 30ns 500nA @ 220V 10pF @ 10V, 1MHz 38°C/W Jl -65°C ~ 150°C Through Hole A, Axial
1N6620US MICROSEMI COMMERCIAL BUSINESS UNIT
Standard 220V 1.2A 1.4V @ 1.2A Fast Recovery =< 500ns, > 200mA (Io) 30ns 500nA @ 220V 10pF @ 10V, 1MHz 13°C/W Jl -65°C ~ 150°C Surface Mount SQ-MELF, A
1N6622US MICROSEMI COMMERCIAL BUSINESS UNIT
Standard 660V 1.2A 1.4V @ 1.2A Fast Recovery =< 500ns, > 200mA (Io) 30ns 500nA @ 660V 10pF @ 10V, 1MHz 13°C/W Jl -65°C ~ 150°C Surface Mount SQ-MELF, A
JANTX1N6620 MICROSEMI CORP
Standard 220V 2A 1.4V @ 1.2A Fast Recovery =< 500ns, > 200mA (Io) 30ns 500nA @ 220V 10pF @ 10V, 1MHz 38°C/W Jl -65°C ~ 150°C - -
JANTX1N6621 MICROSEMI CORP
Standard 440V 2A 1.4V @ 1.2A Fast Recovery =< 500ns, > 200mA (Io) 30ns 500nA @ 440V 10pF @ 10V, 1MHz 38°C/W Jl -65°C ~ 150°C Through Hole A, Axial
JANTXV1N6620 MICROSEMI CORP
Standard 220V 1.2A 1.4V @ 1.2A Fast Recovery =< 500ns, > 200mA (Io) 30ns 500nA @ 220V - 38°C/W Jl -65°C ~ 150°C Through Hole A, Axial
JANTX1N6622 MICROSEMI CORP
Standard 660V 2A 1.4V @ 1.2A Fast Recovery =< 500ns, > 200mA (Io) 30ns 500nA @ 660V 10pF @ 10V, 1MHz 38°C/W Jl -65°C ~ 150°C Through Hole A, Axial