1A,Current - Average Rectified (Io)
1.3V @ 3A, Forward Voltage (Vf)
57 parts found
Part Numbers Manufacturer Name Datasheet Diode Type Reverse DC Voltage(Vr) Current - Average Rectified (Io) Forward Voltage (Vf) Speed Reverse Recovery Time (trr) Reverse Leakage Current @ Vr Capacitance @ Vr, F Thermal Resistance Operating Temperature - Junction Mounting Type Package / Case
1N4249 MICROSEMI COMMERCIAL BUSINESS UNIT
Standard 1000V (1kV) 1A 1.3V @ 3A Standard Recovery >500ns, > 200mA (Io) 5µs 1µA @ 1000V - 42°C/W Jl -65°C ~ 175°C Through Hole A, Axial
1N5622 MICROSEMI COMMERCIAL BUSINESS UNIT
Standard 1000V (1kV) 1A 1.3V @ 3A Standard Recovery >500ns, > 200mA (Io) 2µs 500nA @ 1000V - 38°C/W Jl -65°C ~ 200°C Through Hole A, Axial
1N4245 MICROSEMI COMMERCIAL BUSINESS UNIT
Standard 200V 1A 1.3V @ 3A Standard Recovery >500ns, > 200mA (Io) 5µs 1µA @ 200V - 42°C/W Jl -65°C ~ 175°C Through Hole A, Axial
1N4247 MICROSEMI COMMERCIAL BUSINESS UNIT
Standard 600V 1A 1.3V @ 3A Standard Recovery >500ns, > 200mA (Io) 5µs 1µA @ 600V - 42°C/W Jl -65°C ~ 175°C Through Hole A, Axial
1N4246 MICROSEMI COMMERCIAL BUSINESS UNIT
Standard 400V 1A 1.3V @ 3A Standard Recovery >500ns, > 200mA (Io) 5µs 1µA @ 400V - 42°C/W Jl -65°C ~ 175°C Through Hole A, Axial
1N4248 MICROSEMI COMMERCIAL BUSINESS UNIT
Standard 800V 1A 1.3V @ 3A Standard Recovery >500ns, > 200mA (Io) 5µs 1µA @ 800V - 42°C/W Jl -65°C ~ 175°C Through Hole A, Axial
1N5614 MICROSEMI COMMERCIAL BUSINESS UNIT
Standard 200V 1A 1.3V @ 3A Standard Recovery >500ns, > 200mA (Io) 2µs 500nA @ 200V - 38°C/W Jl -65°C ~ 200°C Through Hole A, Axial
1N5616 MICROSEMI COMMERCIAL BUSINESS UNIT
Standard 400V 1A 1.3V @ 3A Standard Recovery >500ns, > 200mA (Io) 2µs 500nA @ 400V - 38°C/W Jl -65°C ~ 200°C Through Hole A, Axial
1N5618 MICROSEMI COMMERCIAL BUSINESS UNIT
Standard 600V 1A 1.3V @ 3A Standard Recovery >500ns, > 200mA (Io) 2µs 500nA @ 600V - 38°C/W Jl -65°C ~ 200°C Through Hole A, Axial
1N5620 MICROSEMI COMMERCIAL BUSINESS UNIT
Standard 800V 1A 1.3V @ 3A Standard Recovery >500ns, > 200mA (Io) 2µs 500nA @ 800V - 38°C/W Jl -65°C ~ 200°C Through Hole A, Axial