| Part Numbers | Manufacturer Name | Datasheet | Diode Type | Reverse DC Voltage(Vr) | Current - Average Rectified (Io) | Forward Voltage (Vf) | Speed | Reverse Recovery Time (trr) | Reverse Leakage Current @ Vr | Capacitance @ Vr, F | Thermal Resistance | Operating Temperature - Junction | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| RS3K-E3/9AT | VISHAY SEMICONDUCTORS | Standard | 800V | 3A | 1.3V @ 2.5A | Fast Recovery =< 500ns, > 200mA (Io) | 500ns | 10µA @ 800V | 34pF @ 4V, 1MHz | 15°C/W Jl | -55°C ~ 150°C | Surface Mount | DO-214AB, SMC | |
| RS3K-E3/57T | VISHAY SEMICONDUCTORS | Standard | 800V | 3A | 1.3V @ 2.5A | Fast Recovery =< 500ns, > 200mA (Io) | 500ns | 10µA @ 800V | 34pF @ 4V, 1MHz | 15°C/W Jl | -55°C ~ 150°C | Surface Mount | DO-214AB, SMC | |
| RGP25K-E3/54 | VISHAY SEMICONDUCTORS | Standard | 800V | 2.5A | 1.3V @ 2.5A | Fast Recovery =< 500ns, > 200mA (Io) | 500ns | 5µA @ 800V | 60pF @ 4V, 1MHz | 20°C/W Ja | -65°C ~ 175°C | Through Hole | DO-201AD, Axial | |
| RGP25KHE3/54 | VISHAY SEMICONDUCTORS | Standard | 800V | 2.5A | 1.3V @ 2.5A | Fast Recovery =< 500ns, > 200mA (Io) | 500ns | 5µA @ 800V | 60pF @ 4V, 1MHz | 20°C/W Ja | -65°C ~ 175°C | Through Hole | DO-201AD, Axial | |
| RGP25MHE3/54 | VISHAY SEMICONDUCTORS | Standard | 1000V (1kV) | 2.5A | 1.3V @ 2.5A | Fast Recovery =< 500ns, > 200mA (Io) | 500ns | 5µA @ 1000V | 60pF @ 4V, 1MHz | 20°C/W Ja | -65°C ~ 175°C | Through Hole | DO-201AD, Axial | |
| RS3KHE3/9AT | VISHAY SEMICONDUCTORS | Standard | 800V | 3A | 1.3V @ 2.5A | Fast Recovery =< 500ns, > 200mA (Io) | 500ns | 10µA @ 800V | 34pF @ 4V, 1MHz | 15°C/W Jl | -55°C ~ 150°C | Surface Mount | DO-214AB, SMC | |
| RS3KHE3/57T | VISHAY SEMICONDUCTORS | Standard | 800V | 3A | 1.3V @ 2.5A | Fast Recovery =< 500ns, > 200mA (Io) | 500ns | 10µA @ 800V | 34pF @ 4V, 1MHz | 15°C/W Jl | -55°C ~ 150°C | Surface Mount | DO-214AB, SMC | |
| RGP25M-E3/54 | VISHAY SEMICONDUCTORS | Standard | 1000V (1kV) | 2.5A | 1.3V @ 2.5A | Fast Recovery =< 500ns, > 200mA (Io) | 500ns | 5µA @ 1000V | 60pF @ 4V, 1MHz | 20°C/W Ja | -65°C ~ 175°C | Through Hole | DO-201AD, Axial |
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