| Part Numbers | Manufacturer Name | Datasheet | Diode Type | Reverse DC Voltage(Vr) | Current - Average Rectified (Io) | Forward Voltage (Vf) | Speed | Reverse Recovery Time (trr) | Reverse Leakage Current @ Vr | Capacitance @ Vr, F | Thermal Resistance | Operating Temperature - Junction | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GF1M | FAIRCHILD SEMICONDUCTOR CORP | Standard | 1000V (1kV) | 1A | 1.2V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 5µA @ 1000V | 15pF @ 4V, 1MHz | 26°C/W Jl | -65°C ~ 175°C | Surface Mount | DO-214AC, SMA | |
| GF1M-E3/5CA | VISHAY SEMICONDUCTORS | Standard | 1000V (1kV) | 1A | 1.2V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 5µA @ 1000V | - | 26°C/W Jl | -65°C ~ 175°C | Surface Mount | DO-214BA | |
| GF1M-E3/67A | VISHAY SEMICONDUCTORS | Standard | 1000V (1kV) | 1A | 1.2V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 5µA @ 1000V | - | 26°C/W Jl | -65°C ~ 175°C | Surface Mount | DO-214BA | |
| GP10M-E3/54 | VISHAY SEMICONDUCTORS | Standard | 1000V (1kV) | 1A | 1.2V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 3µs | 5µA @ 1000V | 7pF @ 4V, 1MHz | 55°C/W Ja | -65°C ~ 175°C | Through Hole | DO-204AL, DO-41, Axial | |
| GP10M-E3/73 | VISHAY SEMICONDUCTORS | Standard | 1000V (1kV) | 1A | 1.2V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 3µs | 5µA @ 1000V | 7pF @ 4V, 1MHz | 55°C/W Ja | -65°C ~ 175°C | Through Hole | DO-204AL, DO-41, Axial | |
| GP10MHE3/54 | VISHAY SEMICONDUCTORS | Standard | 1000V (1kV) | 1A | 1.2V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 3µs | 5µA @ 1000V | 7pF @ 4V, 1MHz | 55°C/W Ja | -65°C ~ 175°C | Through Hole | DO-204AL, DO-41, Axial | |
| GP10MHE3/73 | VISHAY SEMICONDUCTORS | Standard | 1000V (1kV) | 1A | 1.2V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 3µs | 5µA @ 1000V | 7pF @ 4V, 1MHz | 55°C/W Ja | -65°C ~ 175°C | Through Hole | DO-204AL, DO-41, Axial | |
| GP10ME-E3/54 | VISHAY SEMICONDUCTORS | Standard | 1000V (1kV) | 1A | 1.2V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 3µs | 5µA @ 1000V | 7pF @ 4V, 1MHz | 55°C/W Ja | -65°C ~ 175°C | Through Hole | DO-204AL, DO-41, Axial | |
| GP10MEHE3/54 | VISHAY SEMICONDUCTORS | Standard | 1000V (1kV) | 1A | 1.2V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 3µs | 5µA @ 1000V | 7pF @ 4V, 1MHz | 55°C/W Ja | -65°C ~ 175°C | Through Hole | DO-204AL, DO-41, Axial | |
| GP10ME-E3/73 | VISHAY SEMICONDUCTORS | Standard | 1000V (1kV) | 1A | 1.2V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 3µs | 5µA @ 1000V | 7pF @ 4V, 1MHz | 55°C/W Ja | -65°C ~ 175°C | Through Hole | DO-204AL, DO-41, Axial |
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