| Part Numbers | Manufacturer Name | Datasheet | Diode Type | Reverse DC Voltage(Vr) | Current - Average Rectified (Io) | Forward Voltage (Vf) | Speed | Reverse Recovery Time (trr) | Reverse Leakage Current @ Vr | Capacitance @ Vr, F | Thermal Resistance | Operating Temperature - Junction | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| IDH09G65C5 | INFINEON TECHNOLOGIES AG | Silicon Carbide Schottky | 650V | 9A (DC) | 1.7V @ 9A | No Recovery Time > 500mA (Io) | 0ns | 310µA @ 650V | 270pF @ 1V, 1MHz | 1.8°C/W Jc | -55°C ~ 175°C | Through Hole | TO-220-2 | |
| IDD09SG60C | INFINEON TECHNOLOGIES AG | Silicon Carbide Schottky | 600V | 9A (DC) | 2.1V @ 9A | No Recovery Time > 500mA (Io) | 0ns | 80µA @ 600V | 280pF @ 1V, 1MHz | 1.3°C/W Jc | -55°C ~ 175°C | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
| IDH09SG60C | INFINEON TECHNOLOGIES AG | Silicon Carbide Schottky | 600V | 9A (DC) | 2.1V @ 9A | No Recovery Time > 500mA (Io) | 0ns | 80µA @ 600V | 280pF @ 1V, 1MHz | 1.3°C/W Jc | -55°C ~ 175°C | Through Hole | TO-220-2 | |
| SIDC04D60F6 | INFINEON TECHNOLOGIES AG | Standard | 600V | 9A (DC) | 1.6V @ 9A | Fast Recovery =< 500ns, > 200mA (Io) | - | 27µA @ 600V | - | - | -40°C ~ 150°C | Surface Mount | Wafer |
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