MBRD835LG |
ON SEMICONDUCTOR |
|
Schottky
|
35V
|
8A
|
510mV @ 8A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
-
|
1.4mA @ 35V
|
-
|
2.8°C/W Jc
|
-65°C ~ 150°C
|
Surface Mount
|
TO-252-3, DPak (2 Leads + Tab), SC-63
|
SBRD8835LG |
ON SEMICONDUCTOR |
|
Schottky
|
35V
|
8A
|
510mV @ 8A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
-
|
1.4mA @ 35V
|
-
|
2.8°C/W Jc
|
-65°C ~ 150°C
|
Surface Mount
|
TO-252-3, DPak (2 Leads + Tab), SC-63
|
MBRD835LT4G |
ON SEMICONDUCTOR |
|
Schottky
|
35V
|
8A
|
510mV @ 8A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
-
|
1.4mA @ 35V
|
-
|
2.8°C/W Jc
|
-65°C ~ 150°C
|
Surface Mount
|
TO-252-3, DPak (2 Leads + Tab), SC-63
|
QH08BZ600 |
POWER INTEGRATIONS INC |
|
Schottky
|
600V
|
8A
|
3.15V @ 8A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
11.1ns
|
250µA @ 600V
|
25pF @ 10V, 1MHz
|
2.8°C/W Jc
|
150°C (Max)
|
Surface Mount
|
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
|
STTH8T06DI |
STMICROELECTRONICS |
|
Standard
|
600V
|
8A
|
2.95V @ 8A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
30ns
|
10µA @ 600V
|
-
|
2.8°C/W Jc
|
-40°C ~ 175°C
|
Through Hole
|
TO-220-2
|
SBR835LT4G |
ON SEMICONDUCTOR |
|
Schottky
|
35V
|
8A
|
510mV @ 8A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
-
|
1.4mA @ 35V
|
-
|
2.8°C/W Jc
|
-65°C ~ 150°C
|
Surface Mount
|
TO-252-3, DPak (2 Leads + Tab), SC-63
|
SBRD8835LT4G |
ON SEMICONDUCTOR |
|
Schottky
|
35V
|
8A
|
510mV @ 8A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
-
|
1.4mA @ 35V
|
-
|
2.8°C/W Jc
|
-65°C ~ 150°C
|
Surface Mount
|
TO-252-3, DPak (2 Leads + Tab), SC-63
|
MBRD835LT4 |
ON SEMICONDUCTOR |
|
Schottky
|
35V
|
8A
|
510mV @ 8A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
-
|
1.4mA @ 35V
|
-
|
2.8°C/W Jc
|
-65°C ~ 150°C
|
Surface Mount
|
TO-252-3, DPak (2 Leads + Tab), SC-63
|
MBRD835L |
ON SEMICONDUCTOR |
|
Schottky
|
35V
|
8A
|
510mV @ 8A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
-
|
1.4mA @ 35V
|
-
|
2.8°C/W Jc
|
-65°C ~ 150°C
|
Surface Mount
|
TO-252-3, DPak (2 Leads + Tab), SC-63
|
QH08TZ600 |
POWER INTEGRATIONS INC |
|
Schottky
|
600V
|
8A
|
3.15V @ 8A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
11.1ns
|
250µA @ 600V
|
25pF @ 10V, 1MHz
|
2.8°C/W Jc
|
150°C (Max)
|
Through Hole
|
TO-220-2
|