8A,Current - Average Rectified (Io)
1.6°C/W Jc,Thermal Resistance
8 parts found
Part Numbers Manufacturer Name Datasheet Diode Type Reverse DC Voltage(Vr) Current - Average Rectified (Io) Forward Voltage (Vf) Speed Reverse Recovery Time (trr) Reverse Leakage Current @ Vr Capacitance @ Vr, F Thermal Resistance Operating Temperature - Junction Mounting Type Package / Case
MSR860G ON SEMICONDUCTOR
Standard 600V 8A 1.7V @ 8A Fast Recovery =< 500ns, > 200mA (Io) 120ns 10µA @ 600V - 1.6°C/W Jc -65°C ~ 150°C Through Hole TO-220-2
STPS8H100D STMICROELECTRONICS
Schottky 100V 8A 710mV @ 8A Fast Recovery =< 500ns, > 200mA (Io) - 4.5µA @ 100V - 1.6°C/W Jc 175°C (Max) Through Hole TO-220-2
STPSC8H065D STMICROELECTRONICS
Silicon Carbide Schottky 650V 8A 1.75V @ 8A No Recovery Time > 500mA (Io) 0ns 80µA @ 650V 414pF @ 0V, 1MHz 1.6°C/W Jc -40°C ~ 175°C Through Hole TO-220-2
STPS8H100G STMICROELECTRONICS
Schottky 100V 8A 710mV @ 8A Fast Recovery =< 500ns, > 200mA (Io) - 4.5µA @ 100V - 1.6°C/W Jc 175°C (Max) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
STPS8H100G-TR STMICROELECTRONICS
Schottky 100V 8A 710mV @ 8A Fast Recovery =< 500ns, > 200mA (Io) - 4.5µA @ 100V - 1.6°C/W Jc 175°C (Max) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
MSR860 ON SEMICONDUCTOR
Standard 600V 8A 1.7V @ 8A Fast Recovery =< 500ns, > 200mA (Io) 120ns 10µA @ 600V - 1.6°C/W Jc -65°C ~ 150°C Through Hole TO-220-2
STPSC8H065B-TR STMICROELECTRONICS
Silicon Carbide Schottky 650V 8A 1.75V @ 8A No Recovery Time > 500mA (Io) 0ns 80µA @ 650V 414pF @ 0V, 1MHz 1.6°C/W Jc -40°C ~ 175°C Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63
STPSC8H065G-TR STMICROELECTRONICS
Silicon Carbide Schottky 650V 8A 1.75V @ 8A No Recovery Time > 500mA (Io) 0ns 80µA @ 650V 414pF @ 0V, 1MHz 1.6°C/W Jc -40°C ~ 175°C Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB