8A,Current - Average Rectified (Io)
75ns,Reverse Recovery Time (trr)
6 parts found
Part Numbers Manufacturer Name Datasheet Diode Type Reverse DC Voltage(Vr) Current - Average Rectified (Io) Forward Voltage (Vf) Speed Reverse Recovery Time (trr) Reverse Leakage Current @ Vr Capacitance @ Vr, F Thermal Resistance Operating Temperature - Junction Mounting Type Package / Case
BYR29X-800,127 NXP SEMICONDUCTORS
Standard 800V 8A 1.7V @ 8A Fast Recovery =< 500ns, > 200mA (Io) 75ns 10µA @ 800V - 2.5°C/W Jl 150°C (Max) Through Hole TO-220-2 Full Pack, Isolated Tab
BYR29-800,127 NXP SEMICONDUCTORS
Standard 800V 8A 1.5V @ 8A Fast Recovery =< 500ns, > 200mA (Io) 75ns 10µA @ 800V - 2.5°C/W Jl 150°C (Max) Through Hole TO-220-2
BYR29-600,127 NXP SEMICONDUCTORS
Standard 600V 8A 1.5V @ 8A Fast Recovery =< 500ns, > 200mA (Io) 75ns 10µA @ 600V - 2.5°C/W Jl 150°C (Max) Through Hole TO-220-2
BYR29X-600,127 NXP SEMICONDUCTORS
Standard 600V 8A 1.7V @ 8A Fast Recovery =< 500ns, > 200mA (Io) 75ns 10µA @ 600V - 2.5°C/W Jl 150°C (Max) Through Hole TO-220-2 Full Pack, Isolated Tab
BYT08P-400 STMICROELECTRONICS
Standard 400V 8A 1.5V @ 8A Fast Recovery =< 500ns, > 200mA (Io) 75ns 15µA @ 400V - 2.5°C/W Jc 150°C (Max) Through Hole TO-220-2
BYT08PI-400RG STMICROELECTRONICS
Standard 400V 8A 1.5V @ 8A Fast Recovery =< 500ns, > 200mA (Io) 75ns 15µA @ 400V - 2.5°C/W Jc 150°C (Max) Through Hole TO-220-2 Insulated, TO-220AC