| Part Numbers | Manufacturer Name | Datasheet | Diode Type | Reverse DC Voltage(Vr) | Current - Average Rectified (Io) | Forward Voltage (Vf) | Speed | Reverse Recovery Time (trr) | Reverse Leakage Current @ Vr | Capacitance @ Vr, F | Thermal Resistance | Operating Temperature - Junction | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| IDP08E65D1XKSA1 | INFINEON TECHNOLOGIES AG | Standard | 650V | 8A | 1.7V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 80ns | 40µA @ 650V | - | 2.69°C/W Jc | -40°C ~ 175°C | Through Hole | TO-220-2 | |
| MSR860G | ON SEMICONDUCTOR | Standard | 600V | 8A | 1.7V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 120ns | 10µA @ 600V | - | 1.6°C/W Jc | -65°C ~ 150°C | Through Hole | TO-220-2 | |
| MSRF860G | ON SEMICONDUCTOR | Standard | 600V | 8A | 1.7V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 120ns | 10µA @ 600V | - | 4.75°C/W Jc | -65°C ~ 150°C | Through Hole | TO-220-2 Full Pack | |
| STPSC806D | STMICROELECTRONICS | Silicon Carbide Schottky | 600V | 8A | 1.7V @ 8A | No Recovery Time > 500mA (Io) | 0ns | 100µA @ 600V | 450pF @ 0V, 1MHz | 2.4°C/W Jc | -40°C ~ 175°C | Through Hole | TO-220-2 | |
| STPSC806G-TR | STMICROELECTRONICS | Silicon Carbide Schottky | 600V | 8A | 1.7V @ 8A | No Recovery Time > 500mA (Io) | 0ns | 100µA @ 600V | 450pF @ 0V, 1MHz | 2.4°C/W Jc | -40°C ~ 175°C | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | |
| BYR29X-800,127 | NXP SEMICONDUCTORS | Standard | 800V | 8A | 1.7V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 10µA @ 800V | - | 2.5°C/W Jl | 150°C (Max) | Through Hole | TO-220-2 Full Pack, Isolated Tab | |
| BYR29X-600,127 | NXP SEMICONDUCTORS | Standard | 600V | 8A | 1.7V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 10µA @ 600V | - | 2.5°C/W Jl | 150°C (Max) | Through Hole | TO-220-2 Full Pack, Isolated Tab | |
| MSR860 | ON SEMICONDUCTOR | Standard | 600V | 8A | 1.7V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 120ns | 10µA @ 600V | - | 1.6°C/W Jc | -65°C ~ 150°C | Through Hole | TO-220-2 | |
| SCS108AGC | ROHM CO LTD | Silicon Carbide Schottky | 600V | 8A | 1.7V @ 8A | No Recovery Time > 500mA (Io) | 0ns | 160µA @ 600V | 345pF @ 1V, 1MHz | 2°C/W Jc | 175°C (Max) | Through Hole | TO-220-2 | |
| VS-HFA08PB60PBF | VISHAY SEMICONDUCTORS | Standard | 600V | 8A | 1.7V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 55ns | 5µA @ 600V | - | 0.25°C/W Cs | -55°C ~ 150°C | Through Hole, Radial | TO-247-2 |
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