| Part Numbers | Manufacturer Name | Datasheet | Diode Type | Reverse DC Voltage(Vr) | Current - Average Rectified (Io) | Forward Voltage (Vf) | Speed | Reverse Recovery Time (trr) | Reverse Leakage Current @ Vr | Capacitance @ Vr, F | Thermal Resistance | Operating Temperature - Junction | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| STPSC806G-TR | STMICROELECTRONICS | Silicon Carbide Schottky | 600V | 8A | 1.7V @ 8A | No Recovery Time > 500mA (Io) | 0ns | 100µA @ 600V | 450pF @ 0V, 1MHz | 2.4°C/W Jc | -40°C ~ 175°C | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | |
| C3D08060G | CREE INC | Silicon Carbide Schottky | 600V | 8A | 1.8V @ 8A | No Recovery Time > 500mA (Io) | 0ns | 50µA @ 600V | 441pF @ 0V, 1MHz | 1.4°C/W Jc | -55°C ~ 175°C | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | |
| STPSC8H065B-TR | STMICROELECTRONICS | Silicon Carbide Schottky | 650V | 8A | 1.75V @ 8A | No Recovery Time > 500mA (Io) | 0ns | 80µA @ 650V | 414pF @ 0V, 1MHz | 1.6°C/W Jc | -40°C ~ 175°C | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
| STPSC8H065G-TR | STMICROELECTRONICS | Silicon Carbide Schottky | 650V | 8A | 1.75V @ 8A | No Recovery Time > 500mA (Io) | 0ns | 80µA @ 650V | 414pF @ 0V, 1MHz | 1.6°C/W Jc | -40°C ~ 175°C | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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