| Part Numbers | Manufacturer Name | Datasheet | Diode Type | Reverse DC Voltage(Vr) | Current - Average Rectified (Io) | Forward Voltage (Vf) | Speed | Reverse Recovery Time (trr) | Reverse Leakage Current @ Vr | Capacitance @ Vr, F | Thermal Resistance | Operating Temperature - Junction | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| IDH08S120 | INFINEON TECHNOLOGIES AG | Silicon Carbide Schottky | 1200V (1.2kV) | 7.5A (DC) | 1.8V @ 7.5A | No Recovery Time > 500mA (Io) | 0ns | 180µA @ 1200V | 380pF @ 1V, 1MHz | 1.5°C/W Jc | -55°C ~ 175°C | Through Hole | TO-220-2 | |
| SIDC06D120H6 | INFINEON TECHNOLOGIES AG | Standard | 1200V (1.2kV) | 7.5A (DC) | 1.6V @ 7.5A | Standard Recovery >500ns, > 200mA (Io) | - | 27µA @ 1200V | - | - | -55°C ~ 150°C | Surface Mount | Wafer | |
| IDY15S120 | INFINEON TECHNOLOGIES AG | Silicon Carbide Schottky | 1200V (1.2kV) | 7.5A (DC) | 1.8V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 180µA @ 1200V | 375pF @ 1V, 1MHz | 0.9°C/W Jc, 1.5°C/W Jc | -55°C ~ 150°C | Through Hole | TO-247-3 Variant |
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