| Part Numbers | Manufacturer Name | Datasheet | Diode Type | Reverse DC Voltage(Vr) | Current - Average Rectified (Io) | Forward Voltage (Vf) | Speed | Reverse Recovery Time (trr) | Reverse Leakage Current @ Vr | Capacitance @ Vr, F | Thermal Resistance | Operating Temperature - Junction | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| CDBD6100-G | COMCHIP TECHNOLOGY CORP | Schottky | 100V | 6A (DC) | 850mV @ 6A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 100V | - | 10°C/W Jl | -40°C ~ 125°C | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
| CDBD640-G | COMCHIP TECHNOLOGY CORP | Schottky | 40V | 6A (DC) | 550mV @ 6A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 40V | - | 3°C/W Jc | -50°C ~ 125°C | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
| CDBD660-G | COMCHIP TECHNOLOGY CORP | Schottky | 60V | 6A (DC) | 750mV @ 6A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 60V | - | 3°C/W Jc | -50°C ~ 150°C | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
| IDH06SG60C | INFINEON TECHNOLOGIES AG | Silicon Carbide Schottky | 600V | 6A (DC) | 2.3V @ 6A | No Recovery Time > 500mA (Io) | 0ns | 50µA @ 600V | 130pF @ 1V, 1MHz | 2.1°C/W Jc | -55°C ~ 175°C | Through Hole | TO-220-2 | |
| IDH06G65C5 | INFINEON TECHNOLOGIES AG | Silicon Carbide Schottky | 650V | 6A (DC) | 1.7V @ 6A | No Recovery Time > 500mA (Io) | 0ns | 210µA @ 650V | 190pF @ 1V, 1MHz | 2.4°C/W Jc | -55°C ~ 175°C | Through Hole | TO-220-2 | |
| IDD06SG60C | INFINEON TECHNOLOGIES AG | Silicon Carbide Schottky | 600V | 6A (DC) | 2.3V @ 6A | No Recovery Time > 500mA (Io) | 0ns | 50µA @ 600V | 130pF @ 1V, 1MHz | 2.1°C/W Jc | -55°C ~ 175°C | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
| IDB06S60C | INFINEON TECHNOLOGIES AG | Silicon Carbide Schottky | 600V | 6A (DC) | 1.7V @ 6A | No Recovery Time > 500mA (Io) | 0ns | 80µA @ 600V | 280pF @ 1V, 1MHz | 2.9°C/W Jc | -55°C ~ 175°C | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | |
| IDH06S60C | INFINEON TECHNOLOGIES AG | Silicon Carbide Schottky | 600V | 6A (DC) | 1.7V @ 6A | No Recovery Time > 500mA (Io) | 0ns | 80µA @ 600V | 280pF @ 1V, 1MHz | 2.4°C/W Jc | -55°C ~ 175°C | Through Hole | TO-220-2 | |
| IDV06S60C | INFINEON TECHNOLOGIES AG | Silicon Carbide Schottky | 600V | 6A (DC) | 1.7V @ 6A | No Recovery Time > 500mA (Io) | 0ns | 80µA @ 600V | 280pF @ 1V, 1MHz | 4.5°C/W Jc | -55°C ~ 175°C | Through Hole | TO-220-2 Full Pack | |
| SDP06S60 | INFINEON TECHNOLOGIES AG | Silicon Carbide Schottky | 600V | 6A (DC) | 1.7V @ 6A | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 600V | 300pF @ 0V, 1MHz | 2.6°C/W Jc | -55°C ~ 175°C | Through Hole | TO-220-3 |
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