| Part Numbers | Manufacturer Name | Datasheet | Diode Type | Reverse DC Voltage(Vr) | Current - Average Rectified (Io) | Forward Voltage (Vf) | Speed | Reverse Recovery Time (trr) | Reverse Leakage Current @ Vr | Capacitance @ Vr, F | Thermal Resistance | Operating Temperature - Junction | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 60S1-TP | MICRO COMMERCIAL COMPONENTS | Standard | 100V | 6A | 1V @ 6A | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 100V | - | - | -55°C ~ 150°C | Through Hole | DO-201AD, Axial | |
| UES1302 | MICROSEMI COMMERCIAL BUSINESS UNIT | Standard | 100V | 6A | 925mV @ 6A | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 100V | - | 20°C/W Jc | -55°C ~ 175°C | Through Hole | Axial | |
| 1N6077US | MICROSEMI COMMERCIAL BUSINESS UNIT | Standard | 100V | 6A | 1.76V @ 18.8A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 5µA @ 100V | - | 8.5°C/W Jl | -65°C ~ 155°C | - | - | |
| JAN1N5809 | MICROSEMI CORP | Standard | 100V | 6A | 875mV @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 5µA @ 100V | 60pF @ 10V, 1MHz | 22°C/W Jl | -65°C ~ 175°C | Through Hole | B, Axial | |
| JAN1N5809US | MICROSEMI CORP | Standard | 100V | 6A | 875mV @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 5µA @ 100V | 60pF @ 10V, 1MHz | 22°C/W Jl | -65°C ~ 175°C | - | - | |
| P600B-E3/54 | VISHAY SEMICONDUCTORS | Standard | 100V | 6A | 900mV @ 6A | Standard Recovery >500ns, > 200mA (Io) | 2.5µs | 5µA @ 100V | 150pF @ 4V, 1MHz | 20°C/W Ja | -55°C ~ 150°C | Through Hole | P600, Axial | |
| GI751-E3/54 | VISHAY SEMICONDUCTORS | Standard | 100V | 6A | 900mV @ 6A | Standard Recovery >500ns, > 200mA (Io) | 2.5µs | 5µA @ 100V | 150pF @ 4V, 1MHz | 20°C/W Ja | -50°C ~ 150°C | Through Hole | P600, Axial | |
| GI751-E3/73 | VISHAY SEMICONDUCTORS | Standard | 100V | 6A | 900mV @ 6A | Standard Recovery >500ns, > 200mA (Io) | 2.5µs | 5µA @ 100V | 150pF @ 4V, 1MHz | 20°C/W Ja | -50°C ~ 150°C | Through Hole | P600, Axial | |
| GPP60B-E3/73 | VISHAY SEMICONDUCTORS | Standard | 100V | 6A | 1.1V @ 6A | Standard Recovery >500ns, > 200mA (Io) | 5.5µs | 5µA @ 100V | - | 20°C/W Ja | -55°C ~ 175°C | Through Hole | P600, Axial | |
| GPP60B-E3/54 | VISHAY SEMICONDUCTORS | Standard | 100V | 6A | 1.1V @ 6A | Standard Recovery >500ns, > 200mA (Io) | 5.5µs | 5µA @ 100V | - | 20°C/W Ja | -55°C ~ 175°C | Through Hole | P600, Axial |
© 2016 Copyright
