Part Numbers | Manufacturer Name | Datasheet | Diode Type | Reverse DC Voltage(Vr) | Current - Average Rectified (Io) | Forward Voltage (Vf) | Speed | Reverse Recovery Time (trr) | Reverse Leakage Current @ Vr | Capacitance @ Vr, F | Thermal Resistance | Operating Temperature - Junction | Mounting Type | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
P600J-E3/73 | VISHAY SEMICONDUCTORS | Standard | 600V | 6A | 900mV @ 6A | Standard Recovery >500ns, > 200mA (Io) | 2.5µs | 5µA @ 600V | 150pF @ 4V, 1MHz | 20°C/W Ja | -55°C ~ 150°C | Through Hole | P600, Axial | |
GI756-E3/73 | VISHAY SEMICONDUCTORS | Standard | 600V | 6A | 900mV @ 6A | Standard Recovery >500ns, > 200mA (Io) | 2.5µs | 5µA @ 600V | 150pF @ 4V, 1MHz | 20°C/W Ja | -50°C ~ 150°C | Through Hole | P600, Axial | |
GI756-E3/54 | VISHAY SEMICONDUCTORS | Standard | 600V | 6A | 900mV @ 6A | Standard Recovery >500ns, > 200mA (Io) | 2.5µs | 5µA @ 600V | 150pF @ 4V, 1MHz | 20°C/W Ja | -50°C ~ 150°C | Through Hole | P600, Axial | |
P600J-E3/54 | VISHAY SEMICONDUCTORS | Standard | 600V | 6A | 900mV @ 6A | Standard Recovery >500ns, > 200mA (Io) | 2.5µs | 5µA @ 600V | 150pF @ 4V, 1MHz | 20°C/W Ja | -55°C ~ 150°C | Through Hole | P600, Axial |