| Part Numbers | Manufacturer Name | Datasheet | Diode Type | Reverse DC Voltage(Vr) | Current - Average Rectified (Io) | Forward Voltage (Vf) | Speed | Reverse Recovery Time (trr) | Reverse Leakage Current @ Vr | Capacitance @ Vr, F | Thermal Resistance | Operating Temperature - Junction | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| LXA06T600 | POWER INTEGRATIONS INC | Schottky | 600V | 6A | 2.94V @ 6A | Fast Recovery =< 500ns, > 200mA (Io) | 23ns | 250µA @ 600V | - | 2°C/W Jc | 150°C (Max) | Through Hole | TO-220-2 | |
| LQA06T300 | POWER INTEGRATIONS INC | Schottky | 300V | 6A | 1.9V @ 6A | Fast Recovery =< 500ns, > 200mA (Io) | 11.5ns | 25µA @ 300V | - | 3.7°C/W Jc | 150°C (Max) | Through Hole | TO-220-2 | |
| STPSC606D | STMICROELECTRONICS | Silicon Carbide Schottky | 600V | 6A | 1.7V @ 6A | No Recovery Time > 500mA (Io) | 0ns | 75µA @ 600V | 375pF @ 0V, 1MHz | 2.8°C/W Jc | -40°C ~ 175°C | Through Hole | TO-220-2 | |
| STPSC6H065D | STMICROELECTRONICS | Silicon Carbide Schottky | 650V | 6A | 1.75V @ 6A | No Recovery Time > 500mA (Io) | 0ns | 60µA @ 650V | 300pF @ 0V, 1MHz | 2.4°C/W Jc | -40°C ~ 175°C | Through Hole | TO-220-2 | |
| C3D06065A | CREE INC | Silicon Carbide Schottky | 650V | 6A | 1.8V @ 6A | No Recovery Time > 500mA (Io) | 0ns | 60µA @ 650V | 294pF @ 0V, 1MHz | 1.6°C/W Jc | -55°C ~ 175°C | Through Hole | TO-220-2 | |
| C3D06060A | CREE INC | Silicon Carbide Schottky | 600V | 6A | 1.8V @ 6A | No Recovery Time > 500mA (Io) | 0ns | 50µA @ 600V | 294pF @ 0V, 1MHz | 1.9°C/W Jc | -55°C ~ 175°C | Through Hole | TO-220-2 | |
| SCS106AGC | ROHM CO LTD | Silicon Carbide Schottky | 600V | 6A | 1.5V @ 6A | No Recovery Time > 500mA (Io) | 0ns | 120µA @ 600V | 260pF @ 1V, 1MHz | 2.3°C/W Jc | 175°C (Max) | Through Hole | TO-220-2 | |
| BYT71-800 | STMICROELECTRONICS | Standard | 800V | 6A | 1.4V @ 6A | Fast Recovery =< 500ns, > 200mA (Io) | 300ns | 20µA @ 800V | - | 2.3°C/W Jc | -65°C ~ 150°C | Through Hole | TO-220-2 |
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