| Part Numbers | Manufacturer Name | Datasheet | Diode Type | Reverse DC Voltage(Vr) | Current - Average Rectified (Io) | Forward Voltage (Vf) | Speed | Reverse Recovery Time (trr) | Reverse Leakage Current @ Vr | Capacitance @ Vr, F | Thermal Resistance | Operating Temperature - Junction | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| SCS206AMC | ROHM CO LTD | Silicon Carbide Schottky | 650V | 6A | 1.55V @ 6A | Fast Recovery =< 500ns, > 200mA (Io) | 0ns | 120µA @ 600V | 219pF @ 1V, 1MHz | 4.8°C/W Jc | 175°C (Max) | - | - | |
| 1N5811TR | MICROSEMI COMMERCIAL BUSINESS UNIT | Standard | 150V | 6A | 875mV @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 5µA @ 150V | - | 22°C/W Jl | -65°C ~ 175°C | - | - | |
| 1N6076US | MICROSEMI COMMERCIAL BUSINESS UNIT | Standard | 50V | 6A | 1.76V @ 18.8A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 5µA @ 50V | - | 8.5°C/W Jl | -65°C ~ 155°C | - | - | |
| 1N6077US | MICROSEMI COMMERCIAL BUSINESS UNIT | Standard | 100V | 6A | 1.76V @ 18.8A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 5µA @ 100V | - | 8.5°C/W Jl | -65°C ~ 155°C | - | - | |
| JAN1N5809US | MICROSEMI CORP | Standard | 100V | 6A | 875mV @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 5µA @ 100V | 60pF @ 10V, 1MHz | 22°C/W Jl | -65°C ~ 175°C | - | - | |
| JAN1N5807US | MICROSEMI CORP | Standard | 50V | 6A | 875mV @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 5µA @ 50V | 60pF @ 10V, 1MHz | 22°C/W Jl | -65°C ~ 175°C | - | - | |
| JAN1N5811US | MICROSEMI CORP | Standard | 150V | 6A | 875mV @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 5µA @ 150V | 60pF @ 10V, 1MHz | 22°C/W Jl | -65°C ~ 175°C | - | - |
© 2016 Copyright
